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Novel P-type crystalline silicon battery structure and preparation process thereof

A technology of crystalline silicon cells and preparation process, applied in sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve the problems of incomplete localization of materials and equipment, high risks, long investment return period, etc., and achieve an upgrade cycle The effect of short, quick effect and low investment cost

Inactive Publication Date: 2020-08-25
SHANXI LUAN PHOTOVOLTAICS TECH
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AI Technical Summary

Problems solved by technology

In the next generation of high-efficiency batteries, N-type crystalline silicon has become a hot spot of attention. However, regardless of N-type TOPCon or HIT products, the current investment in equipment is large, and key materials and equipment have not been fully localized. The return on investment period is long and the risk is relatively high.

Method used

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  • Novel P-type crystalline silicon battery structure and preparation process thereof

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Embodiment Construction

[0012] refer to figure 1 , a new P-type crystalline silicon battery structure and its preparation process. The back film layer structure is SixNy / SiOxNy / BSG / P++ from bottom to top, in which BSG / P++ is formed by boron diffusion, and the thickness of P++ layer is 100-200nm, which is close to The doping concentration on the back surface of the silicon substrate is 1x10 19 -5x10 19 / cm -3 Between, BSG film thickness is 3-5nm, doping concentration is 3x10 20 -5x10 20 / cm -3 ; The SixNy / SiOxNy film layer is deposited by PECVD equipment, the refractive index of SiOxNy is 1.7-2.0, the thickness is 3-5nm, the refractive index of SixNy is 2.1-2.3, the thickness is 120-150nm, and the total thickness of the stack is 125-155nm.

[0013] Concrete preparation process implementation process is as follows:

[0014] 1. Clean the velvet. Alkali texturing is used for texturing, the etching amount is controlled at 0.4-0.6g, and the reflectivity is 7%-12%.

[0015] 2. Diffusion knots.

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Abstract

The invention relates to the field of P-type crystalline silicon cell production. The invention discloses a novel P-type crystalline silicon battery structure. The structure of a back film layer is SixNy / SiOxNy / BSG / P++ from bottom to top, wherein a P-type silicon body is arranged on a film, the thickness of the P++ layer is 100-200 nm; the doping concentration of the back surface of a silicon substrate is 1* 10<19> to 5* 10<19> / cm<-3>, the thickness of a BSG film is 3-5 nm, the doping concentration is 3*10<20> to 5*10<20> / cm<-3>, the refractive index of SiOxNy is 1.7-2.0, the thickness is 3-5 nm, the refractive index of SixNy is 2.1-2.3, and the thickness is 120-150 nm. The invention also relates to a preparation process. Compared with an existing PERC battery, the invention provides theefficient battery technical route suitable for a P-type crystalline silicon battery which is high in conversion efficiency, low in investment cost, short in upgrading period and quick in effects.

Description

technical field [0001] The invention relates to the field of P-type crystalline silicon battery production. Background technique [0002] Currently, the mainstream product of P-type crystalline silicon cells is PERC cells. After nearly 2-3 years of rapid development, PERC products have matured and encountered technical bottlenecks. In the next generation of high-efficiency batteries, N-type crystalline silicon has become a hot spot. However, regardless of N-type TOPCon or HIT products, the current investment in equipment is large, and key materials and equipment have not been fully localized. The return on investment period is long and the risk is relatively high. . Contents of the invention [0003] The technical problem to be solved by the present invention is: how to find a suitable P-type crystalline silicon battery, which can replace PERC battery, the future high-efficiency battery technology direction, which has a high degree of overlap with the current technology, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/0216H01L31/18
CPCH01L31/02167H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 杨飞飞张波李雪方张云鹏郭丽吕爱武杜泽霖李陈阳赵科巍鲁贵林
Owner SHANXI LUAN PHOTOVOLTAICS TECH
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