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Method of fabricating magnetic random access memory cell array

A random access memory and cell array technology, applied in the manufacture/processing of electrical components, electromagnetic devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as shortening, damage to MRAM performance, write voltage or current fluctuations, etc.

Pending Publication Date: 2020-09-01
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, the write operation in the non-volatile memory is based on the change of the resistance state, so it is necessary to control the damage and shortening of the life of the MTJ memory device caused by it.
However, making a small MTJ element may increase the fluctuation of MTJ resistance, so that the write voltage or current of pSTT-MRAM will also fluctuate greatly, which will damage the performance of MRAM

Method used

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  • Method of fabricating magnetic random access memory cell array
  • Method of fabricating magnetic random access memory cell array
  • Method of fabricating magnetic random access memory cell array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] A method for making a magnetic random access memory cell array of the present invention provides a method for making an ultra-small size magnetic memory cell array, through a bottom electrode through hole (BEV) and a metal connection Mx (x ≥ 1) Or make a layer of non-Cu bottom electrode via contact (Bottom Electrode VIA Contact, BEVC) between the metal vias Vx (x≥1) to solve the problem of bottom electrode vias and metal wiring Mx (x ≥1) or a series of problems arising from the continuous deterioration of the contact resistance of the metal via Vx (x≥1).

[0054] More specifically, since the bottom electrode via contact (BEVC) is made of non-Cu metal, there is enough over-etch space when making the bottom electrode via (BEV), and there will be no gap between the BEVC and the BEV. Residues with poor conductivity are left; at the same time, since the bottom electrode through-hole contact (BEVC) does not become significantly smaller as the critical dimension of the MTJ bec...

Embodiment 2

[0098] The main difference between the second embodiment and the first embodiment is that another solution of the first step is provided, and the rest is the same as the first embodiment.

[0099] Step 1: Provide a surface-polished CMOS substrate 100 with a metal connection line Mx (x≥1) or a metal through hole Vx (x≥1), and make a bottom electrode via contact (BEVC, Bottom Electrode Via Contact) thereon ), its material can be TaN, Ta, Ti, TiN, Co, W, Al, WN, Ru or their combination.

[0100] Figure 3(a) is a schematic diagram of step 1.2.1 in Embodiment 2 of the present invention;

[0101] Figure 3(b) is a schematic diagram of step 1.2.2 in Embodiment 2 of the present invention;

[0102] Figure 3(c) is a schematic diagram of step 1.2.3 in Embodiment 2 of the present invention;

[0103] Fig. 3(d) is a schematic diagram of step 1.2.4 in the second embodiment of the present invention.

[0104] Its formation steps can specifically be:

[0105] 1.2.1: Deposit a layer of dielec...

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Abstract

The invention discloses a method for manufacturing a magnetic random access memory unit array. A layer of non-Cu bottom electrode through hole contact is manufactured between a bottom electrode through hole and a metal connecting wire or a metal through hole, so that a series of problems caused by THE continuous deterioration of contact resistance of the bottom electrode through hole and the metalconnecting wire or the metal through hole along with the continuous reduction of the size of an MRAM are solved. The bottom electrode through hole contact is formed by TaN, Ta, Ti, TiN, Co, W, Al, WN, Ru and other metals, when the bottom electrode through hole is manufactured, enough over-etching space is provided, and the residues with poor conductivity cannot be left between a BEVC and a BEV. Meanwhile, the BEVC cannot be obviously reduced along with the reduction of the critical dimension of an MTJ, therefore, along with the reduction of the size of the MTJ, a loop between an MTJ bottom electrode and the metal connecting wire does not go wrong, and the miniaturization of the magnetic memory cell array of the MRAM is greatly facilitated.

Description

technical field [0001] The present invention relates to the field of magnetic random access memory (MRAM, Magnetic Radom Access Memory) manufacturing technology, in particular, the present invention relates to a method for manufacturing a magnetic random access memory cell array. Background technique [0002] In recent years, MRAM using Magnetic Tunnel Junction (MTJ) is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, which The direction of magnetization remains unchanged. [0003] In order to record information in this magnetoresistive element, it is suggested to use a w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L43/12H10N50/01
CPCH01L21/76897H10N50/01
Inventor 郭一民张云森肖荣福陈峻
Owner SHANGHAI CIYU INFORMATION TECH CO LTD