Silicon controlled device and manufacturing method thereof

A manufacturing method and technology for silicon devices, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased difficulty in designing and manufacturing thyristor devices, performance degradation of SCR devices, and large layout area, etc. The effect of low trigger voltage, reduced production cost, and high electrostatic discharge capability

Active Publication Date: 2020-09-04
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This design not only requires a larger layout area, but also adds a lot of device types (such as resistors, capacitors, NMOS and PMOS, etc.), which not only makes the design and manufacture of thyristor devices more difficult, but also often due to Design defects or process defects lead to degradation of SCR device performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon controlled device and manufacturing method thereof
  • Silicon controlled device and manufacturing method thereof
  • Silicon controlled device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0055] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0056] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0057] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0058] A method for manufacturing a thyristor device, such as Figure 1-6 shown, including:

[0059] Step S1, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention provides a silicon controlled device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, forming an epitaxial layer on the substrate, forming awell region, i.e., a doped region, forming an injection region, and depositing a dielectric layer and a metal connection layer, wherein the device comprises a substrate, an epitaxial layer, a well region, an N+ injection region, a P+ injection region, a dielectric layer and a metal wiring layer. The silicon controlled device has the beneficial effects that the silicon controlled device provided by the invention has a lower trigger voltage, the higher electrostatic discharge capacity, higher stability and reliability, and meanwhile, the silicon controlled device is small in area, redundant device types do not need to be increased, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor protection devices, in particular to a thyristor device and a manufacturing method. Background technique [0002] SCR (Silicon Controlled Rectifier, SCR) is widely used in power devices. Because it can switch between high resistance state and low resistance state, it can be used as a power switch, and it is also a very effective electrostatic discharge device. (Electro-Static Discharge, ESD) protected devices have an excellent ability to discharge static electricity. Compared with diodes, triodes and field effect transistors, its own positive feedback mechanism makes thyristor devices have the advantages of strong current discharge capability, high discharge efficiency per unit area, small on-resistance, strong robustness, and high protection level. It can achieve a higher electrostatic protection level with a smaller chip area in the semiconductor planar process. [0003] The trigger volt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/332H01L29/06H01L29/74
CPCH01L29/7412H01L29/7408H01L29/7436H01L29/66371H01L29/66393H01L29/0603H01L29/0684Y02P70/50
Inventor 蒋骞苑赵德益赵志方吕海凤张啸王允
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap