Silicon controlled device and manufacturing method thereof

Abstract

The invention provides a silicon controlled device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, forming an epitaxial layer on the substrate, forming awell region, i.e., a doped region, forming an injection region, and depositing a dielectric layer and a metal connection layer, wherein the device comprises a substrate, an epitaxial layer, a well region, an N+ injection region, a P+ injection region, a dielectric layer and a metal wiring layer. The silicon controlled device has the beneficial effects that the silicon controlled device provided by the invention has a lower trigger voltage, the higher electrostatic discharge capacity, higher stability and reliability, and meanwhile, the silicon controlled device is small in area, redundant device types do not need to be increased, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor protection devices, in particular to a thyristor device and a manufacturing method. Background technique [0002] SCR (Silicon Controlled Rectifier, SCR) is widely used in power devices. Because it can switch between high resistance state and low resistance state, it can be used as a power switch, and it is also a very effective electrostatic discharge device. (Electro-Static Discharge, ESD) protected devices have an excellent ability to discharge static electricity. Compared with diodes, triodes and field effect transistors, its own positive feedback mechanism makes thyristor devices have the advantages of strong current discharge capability, high discharge efficiency per unit area, small on-resistance, strong robustness, and high protection level. It can achieve a higher electrostatic protection level with a smaller chip area in the semiconductor planar process. [0003] The trigger volt...

AI Technical Summary

Problems solved by technology

This design not only requires a larger layout area, but also adds a lot of device types (such as resistors, capacitors, NMOS and PMOS, etc.), which not only makes the design and manufacture of thyristor devices more difficult, but also often due to Design defects or process defects lead to degradation of SCR device performance

Images