Integrated IGBT packaging structure based on DBC layout

A packaging structure and layout technology, applied in the direction of semiconductor/solid-state device components, semiconductor devices, electrical components, etc., can solve the problems of reducing the IGBT working safety area, high installation process requirements, and large DC loop area, etc. The effect of expanding the working safety area, reducing the stray inductance and improving the power density

CN111627899AActive Publication Date: 2020-09-04成都森未科技有限公司
12 Cites 1 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2020-09-04

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention belongs to the field of semiconductor packaging and power modules, in particular to an integrated IGBT packaging structure based on DBC layout. The structure comprises a three-phase DBCstructure. A frame is fixed outside the three-phase DBC structure, a plurality of chips are welded on the front surface of the three-phase DBC structure, the back surface of the three-phase DBC structure is directly welded on the radiator, the chips in the three-phase DBC structure are connected with one another, and a laminated busbar is connected to a direct-current terminal of the three-phase DBC structure. The three-phase DBC is directly welded to the radiator, and compared with a traditional process, one layer of substrate is omitted in the process, so that the thermal resistance is greatly reduced, and the power density is improved; and meanwhile, the process is convenient to realize automatically, and the production efficiency is improved.
Need to check novelty before this filing date? Find Prior Art

Description

Technical field

[0001] This application belongs to the field of semiconductor packaging and power modules, in particular to an integrated IGBT packaging structure based on a DBC layout. Background technique

[0002] With the development of power semiconductor technology, IGBTs are widely used in new energy vehicles, new energy power generation, rail transit, etc., and high efficiency and high power density have increasingly become key indicators in applications. In these applications, the IGBT is often installed on the radiator, and the DC terminal is connected to the busbar terminal by screws. At present, in applications that require high power density, the IGBT base plate adopts the PINFIN structure, and the IGBT module is fixed to the radiator tank with screws. The water tank needs to be sealed with a gasket, which requires a higher installation process. In addition, because the IGBT DC terminal and the bus bar are connected by screws, the DC loop area is large, resulting in ...

Examples

Embodiment 1

[0030] The integrated IGBT packaging structure based on a DBC layout includes a three-phase DBC structure, the outside of the three-phase DBC structure is fixed with a frame, the front of the three-phase DBC structure is welded with multiple chips, and the back of the three-phase DBC structure is directly welded on On the radiator, the chips in the three-phase DBC structure are connected to each other, and the DC terminals of the three-phase DBC structure are connected with laminated bus bars. The three-phase DBC of the present application is directly welded to the radiator. This process has one less substrate than the traditional process, which greatly reduces the thermal resistance and improves the power density; at the same time, this process is easy to realize automation and improves production efficiency. . A single DBC structure includes a ceramic insulating substrate 000. The front side of the ceramic insulating substrate 000 is provided with an upper bridge IGBT chip 00...

Embodiment 2

[0032] The integrated IGBT packaging structure based on a DBC layout includes a three-phase DBC structure, the outside of the three-phase DBC structure is fixed with a frame, the front of the three-phase DBC structure is welded with multiple chips, and the back of the three-phase DBC structure is directly Soldered on the heat sink, the chips in the three-phase DBC structure are connected to each other, and the DC terminals of the three-phase DBC structure are connected with laminated bus bars. The DBC structure includes a ceramic insulating substrate 000. The front side of the ceramic insulating substrate 000 is provided with an upper bridge IGBT chip 001, an upper bridge diode chip 002, a lower bridge IGBT chip 016, a lower bridge diode chip 017, an NTC temperature sensor 005 and multiple surfaces. Copper foil; the upper bridge IGBT chip 001 and the upper bridge diode chip 002 are connected by surface copper foil, the upper bridge diode chip 002 and the upper bridge IGBT chip 0...