Ultraviolet light LED chip structure

Abstract

The embodiment of the invention provides an ultraviolet light LED chip structure. The ultraviolet light LED chip structure comprises a substrate, a light-emitting functional layer, a transparent conducting layer and a metal emission layer, wherein the light-emitting functional layer is arranged on the lower surface of the substrate, the light-emitting functional layer is in a pyramid frustum shapewith the cross section size being gradually increased, and the cross section size of the surface, which is connected with the substrate, of the light-emitting functional layer is smaller than that ofthe surface, which is away from the substrate, of the light-emitting functional layer; the transparent conducting layer is arranged on the upper surface of the substrate; and the metal emission layeris arranged on the surface, which is away from the substrate, of the light-emitting functional layer. According to the invention, the side wall surface of the light-emitting functional layer is arranged on the inclined surface, so that the area of a transparent electrode on the upper surface of the ultraviolet light LED chip structure can be effectively reduced, the area of the metal emission layer on the lower surface is increased, and the light emitting area of the ultraviolet light LED chip structure can be increased. In addition, the inclined side wall surface is favorable for improving the light extraction efficiency of the ultraviolet light LED chip structure.

Description

technical field [0001] The present application relates to the technical field of LED lighting, and in particular, to an ultraviolet LED chip structure. Background technique [0002] For LED chips with transparent substrates, such as GaN-based blue (B), green (G) and ultraviolet (UV) LED chips with sapphire (α-phase Al2O3) growth substrates, and gallium phosphide (GaP) Or red (R), yellow (Y) or infrared (IR) LED chips with substrates such as sapphire; since the transparent substrate is used as the window layer of the LED chip, the transparent substrate has a glue thickness relative to the LED light-emitting layer. Size, there will be a certain proportion of light emitted from the side of the flip chip, and because the refractive index of the transparent substrate material is generally between the LED luminescent material and the refractive index of air, the small refractive index difference between the transparent substrate and air allows light There is an escape cone with a...

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Problems solved by technology

[0002] For LED chips with transparent substrates, such as GaN-based blue (B), green (G) and ultraviolet (UV) LED chips with sapphire (α-phase Al2O3) growth substrates, and gallium phosphide (GaP) Or red (R), yellow (Y) or infrared (IR) LED chips with substrates such as sapphire; since the transparent substrate is used as the window layer of the LED chip, the transparent substrate has a glue thickness relative to the LED light-emitting layer. Size, there will be a certain proportion of light emitted from the side of the flip chip, and because the refractive index of the transparent substrate material is generally between the LED luminescent material and the refractive index of air, the small refractive index difference between the transparent substrate and air allows light The escape cone with a larger exit angle, so the traditional flip-chip LED chip has a larger light-emitting angle than the front-mounted LED chip, resulting in a lower light extraction rate of the LED chip structure in the prior art

[0003] For the above problems, there is no effective technical solution

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