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Three-phase bridge type low parasitic oscillation two-level SiC MOSFET circuit topological structure

A circuit topology and three-phase bridge technology, applied in the field of converters, can solve the problems of increasing the difficulty and cost of circuit development, which is not conducive to the rapid application of SiC MOSFETs, etc., and achieve simple and convenient circuit topology, low cost, and reduced switching loss Effect

Inactive Publication Date: 2020-09-22
NANTONG UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This increases the difficulty and cost of circuit development, which is not conducive to the rapid application of SiC MOSFETs in converters

Method used

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  • Three-phase bridge type low parasitic oscillation two-level SiC MOSFET circuit topological structure
  • Three-phase bridge type low parasitic oscillation two-level SiC MOSFET circuit topological structure
  • Three-phase bridge type low parasitic oscillation two-level SiC MOSFET circuit topological structure

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Embodiment Construction

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0033] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "another end" The orientation or positional relationship indicated by etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that ...

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Abstract

The invention discloses a three-phase bridge type low parasitic oscillation two-level SiC MOSFET circuit topological structure. The structure comprises a direct-current power supply V, a DC bus capacitor C, six ferrite magnetic beads FB1to FB6, six SiC MOSFETs M1 to M6, six diodes D1 to D6, an A-phase load inductor LA, a load resistor RA, a B-phase load inductor LB, a load resistor RB, a C-phase load inductor LC and a load resistor RC. The A-phase load inductor LA and the load resistor RA are connected between the SiC MOSFET M1 and the SiC MOSFET M4; and the B-phase load inductor LB and the load resistor RB are connected between the SiC MOSFET M2 and the SiC MOSFET M5, and the C-phase load inductor LC and the load resistor RC are connected between the SiC MOSFET M3 and the SiC MOSFET M6. The A-phase load, the B-phase load and the C-phase load are in Y-shaped connection, and the direct-current power supply V is connected with the direct-current bus capacitor C and the three-phase bridgein parallel. According to the topological circuit disclosed by the invention, the parasitic oscillation phenomenon of the circuit can be effectively suppressed by arranging the ferrite magnetic beads.

Description

technical field [0001] The invention relates to the technical field of converters, in particular to a three-phase bridge-type low parasitic oscillation two-level SiC MOSFET circuit topology. Background technique [0002] The two-level bridge circuit with three-phase six switches is the most widely used topology in actual industrial applications, and is often seen in photovoltaic power generation, micro-inverter power supply and other applications. The traditional three-phase bridge circuit uses Si IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) as the switching device. However, due to the insufficient performance of Si IGBT, it is difficult to further develop the three-phase bridge. With the emergence of wide bandgap semiconductor devices such as SiC MOSFETs, power electronic equipment can work at higher operating voltage, power, power density, switching frequency, operating temperature, and lower volume and loss. Compared with the traditional d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/483H02M7/5387
CPCH02M7/483H02M7/53875H02M1/0038Y02B70/10
Inventor 张雷赵婧琳孙艺鹤任磊杨德健严秋锋
Owner NANTONG UNIVERSITY
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