Two-level SiC MOSFET H bridge main circuit topology with low parasitic oscillation

Abstract

The invention discloses a two-level SiC MOSFET H bridge main circuit topology with low parasitic oscillation. The topology is composed of the following components: a direct current power supply Vdc, adirect current bus capacitor C, a load inductor L, a load resistor R, four ferrite magnetic beads FB1, FB2, FB3 and FB4, four SiC MOSFETs M1, M2, M3 and M4, and four antiparallel diodes D1, D2, D3 and D4. The ferrite magnetic bead FB1, the SiC MOSFET M1, the SiC MOSFET M2 and the ferrite magnetic bead FB2 are sequentially connected in series to form a first half bridge; the ferrite magnetic beadFB3, the SiC MOSFET M3, the SiC MOSFET M4 and the ferrite magnetic bead FB4 are sequentially connected in series to form a second half bridge; the load inductor L and the load resistor R are connectedbetween the SiC MOSFET M1 and the SiC MOSFET M2 and are connected with the middle of the SiC MOSFET M3 and the middle of the SiC MOSFET M4; and the direct current power supply Vdc is connected with the direct current bus capacitor C and two half bridges in parallel. In the topology, the key components of the magnetic beads FB1, FB2, FB3 and FB4 play a role in suppressing parasitic oscillation ofthe circuit.

Description

technical field [0001] The invention relates to the technical field of converters, in particular to a low parasitic oscillation two-level SiC MOSFET H-bridge main circuit topology. Background technique [0002] At present, the two-level H-bridge circuit is widely used in photovoltaic power generation, micro-inverter power supply and other occasions. The traditional two-level H-bridge circuit uses Si IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) as the switching device. However, due to the insufficient performance of Si IGBT, it is difficult to further develop the two-level H-bridge circuit. Compared with Si IGBT, SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field-Effect Transistor), as one of the new wide bandgap power electronic devices, has high operating junction temperature, high voltage level, switch High frequency, fast switching speed, low switching loss and other advantages. These advantages...

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Problems solved by technology

This increases the difficulty and time of circuit development, which is not conducive to the application of SiC MOSFETs in circuits

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