Ultrahigh-resolution anti-etching metal-containing block copolymer as well as preparation and application of same

A block copolymer and ultra-high resolution technology, which is applied in the field of ultra-high resolution anti-etching block copolymers containing organic metals, can solve the problem of inability to obtain microphase separation structure, affect the application of DSA materials, and the impossibility of doping process Controllability and other issues, to achieve the effect of reducing assembly defect rate, convenient pattern transfer, and good etching contrast

Inactive Publication Date: 2020-09-25
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Traditional DSA materials still have many shortcomings. Polystyrene polymethyl methacrylate block copolymer (PS-b-PMMA) cannot obtain microphases smaller than 10nm due to the low Flory-Huggins interaction parameter (χ). Although the reported high-χ block copolymer system can obtain higher-resolution patterns, the material itself has poor etching resistance due to its all-organic composition and cannot provide sufficient support for pattern transfer. Sufficient etching contrast affects the application of DSA materials in the actual production of photolithography process
The etch resistance of the material can be improved by doping metal, but due to the uncontrollability of the doping process itself, defects will be introduced into the formed pattern, which will affect the performance of the material itself.

Method used

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  • Ultrahigh-resolution anti-etching metal-containing block copolymer as well as preparation and application of same
  • Ultrahigh-resolution anti-etching metal-containing block copolymer as well as preparation and application of same
  • Ultrahigh-resolution anti-etching metal-containing block copolymer as well as preparation and application of same

Examples

Experimental program
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Embodiment 1

[0069] A polymer nanomaterial for ultra-high resolution metal-containing DSA. The material includes a block copolymer. The block copolymer is composed of a metal-containing block and a fluorine-containing block. The RAFT method is used to prepare the scratch-resistant Corroded block copolymers in which 2-Cyano-2-propyl benzodithioate (CPDB) is used as chain transfer agent, azobisisobutyronitrile (AIBN) As an initiator, 1H, 1H-perfluorobutyl methacrylate (1H, 1H-Heptafluorobutylmethacrylate, HFBMA) as a monomer, and hexafluoroisopropanol as a solvent, HFBMA, CPDB, AIBN and hexafluoroisopropanol Put it into the Shrek reaction tube, after deoxygenation, react at 50-80°C for 2-30 hours, then precipitate it with methanol and dry it for later use. Use the obtained fluorine-containing monomer homopolymer as a macromolecular chain transfer agent, AIBN as an initiator, and ferroceneformyloxyethyl methacrylate (2-(Methacryloyloxy)ethylFerrocenecarboxylate, MAEFC) as a monomer, cyclohexa...

Embodiment 2

[0081] A polymer nanomaterial for ultra-high resolution metal-containing DSA. The material includes a block copolymer. The block copolymer is composed of two parts: a metal-containing block and a fluorine-containing block. The RAFT method is used to prepare the scratch-resistant Corroded block copolymers in which 2-Cyano-2-propyl benzodithioate (CPDB) is used as chain transfer agent, azobisisobutyronitrile (AIBN) As an initiator, 1H, 1H-perfluorobutyl methacrylate (1H, 1H-Heptafluorobutylmethacrylate, HFBMA) as a monomer, and hexafluoroisopropanol as a solvent, HFBMA, CPDB, AIBN and hexafluoroisopropanol Put it into the Shrek reaction tube, after deoxygenation, react at 50-80°C for 2-30 hours, then precipitate it with methanol and dry it for later use. Use the obtained fluorine-containing monomer homopolymer as a macromolecular chain transfer agent, AIBN as an initiator, ferrocenemethyl methacrylate (Ferrocenemethyl Methacrylatee, FMMA) as a monomer, and cyclohexanone as a sol...

Embodiment 3

[0091] A polymer nanomaterial for ultra-high resolution metal-containing DSA. The material includes a block copolymer. The block copolymer is composed of two parts: a metal-containing block and a fluorine-containing block. The RAFT method is used to prepare the scratch-resistant Corroded block copolymers in which 2-Cyano-2-propyl benzodithioate (CPDB) is used as chain transfer agent, azobisisobutyronitrile (AIBN) As an initiator, perfluorophenyl methacrylate (Pentafluorophenylmethacrylate, PFPMA) is used as a monomer, and hexafluoroisopropanol is used as a solvent. PFPMA, CPDB, AIBN and hexafluoroisopropanol are added to the Shrek reaction tube to remove oxygen. Finally, react at 50-80°C for 2-30 hours, and then precipitate and dry with methanol before use. Use the obtained fluorine-containing monomer homopolymer as a macromolecular chain transfer agent, AIBN as an initiator, and ferrocene formyloxyethyl methacrylate (2-(Methacryloyloxy)ethyl Ferrocenecarboxylate, MAEFC) as a ...

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Abstract

The invention relates to an ultrahigh-resolution anti-etching metal-containing block copolymer as well as preparation and application of the same; wherein the block copolymer comprises a first block and a second block, the first block uses an alkyl chain (C >= 1) as a spacer and an organometallic group as a methacrylate or acrylate side chain metal compound containing a metal unit as a monomer, and the second block uses a fluorine-containing methacrylate or acrylate compound as a monomer. Compared with the prior art, the first block and the second block in the block copolymer have large chemical component difference, so that the block copolymer has the advantages of being good in etching contrast ratio, convenient in pattern transfer, high in assembly speed, low in defect rate and the like.

Description

technical field [0001] The invention belongs to the technical field of photolithographic materials, and relates to a highly ordered ultra-high resolution anti-etching organic metal-containing block copolymer and its preparation and application. It has high resolution (<5nm linewidth) and has High etch resistance. Background technique [0002] Integrated circuit (integrated circuit, IC) is one of the most critical technologies in the information age. From daily life to industrial production, all devices related to electronic computing are inseparable from chips. With the continuous improvement of chip integration, electronic The functions of devices have also become more and more powerful, and mobile phones have also been able to enter the era of 3G, 4G and even 5G. In 1965, Gordon Moore, one of the founders of Intel, proposed an empirical law that the number of transistors per unit area on an integrated circuit will double every 18 to 24 months, and at the same time the ...

Claims

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Application Information

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IPC IPC(8): C08F293/00C08F230/04C08F220/24C08F2/38G03F7/004
CPCC08F2/38C08F220/24C08F230/04C08F293/005C08F2438/03G03F7/004C08F2500/03
Inventor 邓海吴光亚
Owner FUDAN UNIV
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