Lateral double diffused transistor and method of making the same

Abstract

The invention relates to the technical field of semiconductors, and provides a lateral double-diffused transistor and a manufacturing method thereof. The lateral double-diffused transistor includes a straight part and a curved part, and the straight part includes a straight drain end, a straight drift region, a straight source gate and a substrate. , the straight source gate and the substrate are arranged on both sides of the straight drain end, the straight drift region is arranged between the straight drain end, the straight source gate and the substrate; the curved part includes the curved drain end, the curved source gate and the lining The bottom and the curved drift region located between the curved drain end and the curved source gate and the substrate, and a plurality of curved doping strips, wherein the curved drift region, the curved source gate and the substrate are connected to the curved source gate and the substrate. The concentric semi-circular ring structure of the channel drain end is arranged on the periphery of the curved channel drain end in turn, a plurality of curved doping strips are arranged in the curved drift region at intervals, and the extension direction of the center line of at least one curved doping strip is the same as that of the curved channel. The radii of the semicircular structures of the track parts are coincident. Thereby, charge balance can be achieved to improve the breakdown voltage and effectively reduce the source-drain on-resistance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a lateral double diffusion transistor and a manufacturing method thereof. Background technique [0002] Lateral Double-Diffused MOSFET (LDMOS) transistor, as a kind of power field effect transistor, has process compatibility, good thermal stability and frequency stability, high gain, low feedback capacitance and thermal resistance, and constant input impedance, etc. Because of its excellent characteristics, it has been widely used, and people's performance requirements for LDMOS are getting higher and higher. [0003] LDMOS device is a key component of the entire power integrated circuit, and its structural performance directly affects the performance of the power integrated circuit. The main parameters to measure the performance of LDMOS are on-resistance and breakdown voltage. The smaller the on-resistance, the better, and the larger the breakdown voltage, the better. ...

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Problems solved by technology

However, due to the fan-shaped structure of the racetrack-shaped LDMOS structure, the width of the source end is much larger than the width of the drain end. In any angle range, there are more P-type impurities and less N-type impurities, and the charge in the N-type drift region 202 of the bend is Unbalanced, low breakdown voltage, low source-drain on-resistance

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