Method for calibrating silicon nanowire sensor by using cursor

Abstract

The invention provides a method for calibrating a silicon nanowire sensor by using a cursor. The method comprises the steps of carrying out surface modification on the silicon nanowire sensor; acquiring photoresponse current of the modified silicon nanowire sensor under different illumination intensities in a predetermined test environment; determining a photoresponse function analytic expressionof a photoresponse function expression based on the photoresponse current; determining a target object response function analytic expression of a target object response function expression according to the light response function analytic expression and the environment variable offset value; and determining the concentration of the to-be-detected sample corresponding to the response current of theto-be-detected sample based on the target object response function analytic expression. According to the method, the performance of the silicon nanowire sensor is evaluated by utilizing the light absorption efficiency of the silicon nanowire, and the problem of inconsistent response efficiency of a sensing device caused by difference of sensing units is solved. The calibration method has the advantages of simplicity, high efficiency, low cost, no damage to the device and no interference to the use of subsequent devices.

Description

Technical field: [0001] The invention relates to the technical field of sensors, in particular to a method for using a cursor to position a silicon nanowire sensor. Background technique: [0002] Sensors using silicon nanowires as sensitive units have the advantages of high sensitivity, low cost, and fast response, so silicon nanowire sensors have attracted the attention of many researchers. Silicon nanowire sensors use silicon as the basic material. Due to the different etching rates of silicon in different crystal orientations, silicon nanowires can be obtained by a potassium hydroxide wet etching process. Compared with the processing methods of chemical growth or electron beam pattern exposure, the cost of traditional wet etching process is lower. Therefore, from the perspective of cost and abundant raw materials, silicon nanowire sensors have incomparable advantages over other types of silicon nanowire sensors. [0003] With the traditional wet etching process, due to s...

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Problems solved by technology

[0003] With the traditional wet etching process, due to slight differences in molecular diffusion rate and etchant concentration, different etching rates will appear in different regions of the silicon wafer, which will eventually lead to slight deviations in the size of silicon nanowires in different regions of the silicon wafer, affecting devices. overall consistency

Using silicon nanowire sensors from different batches or different areas of silicon wafers to test the same target, the test results obtained are not the same, and accurate quantitative tests cannot be performed

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