Method and structure for bonding light emitting diode and substrate
A technology of light-emitting diodes and substrates, which is applied to electrical components, electrical solid devices, circuits, etc., and can solve problems such as difficulties in the manufacturing process, increased costs, and inability to completely bond N-type contact pads and P-type contact pads.
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[0021] Figure 1A to Figure 1D The cross-sectional view of FIG. 1 shows the method for bonding the LED 11 and the substrate 12 according to the first embodiment of the present invention.
[0022] refer to Figure 1A , providing (inverted) light emitting diodes 11 disposed on the bottom surface of a light emitting diode substrate 110 (such as sapphire, gallium arsenide (GaAs), silicon carbide (SC) or other suitable materials). Wherein, the LED 11 may include an N-type layer 111 disposed on the bottom surface of the LED substrate 110 ; and an N-type contact pad 112 disposed on the bottom surface of the N-type layer 111 . The LED 11 may include a potential well 113 , such as a multiple quantum well (MQW), disposed on the bottom surface of the N-type layer 111 . The LED 11 may include a P-type layer 114 disposed on the bottom surface of the potential energy well 113 ; and a P-type contact pad 115 disposed on the bottom surface of the P-type layer 114 . A first height difference ...
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