Flexible photoelectric sensing memristor based on sawtooth structure nanowire
A technology of nanowires and sensing memory, applied in nano optics, nanotechnology for information processing, nanotechnology, etc., can solve the problems of lack of device research and achieve the goals of reducing power consumption, shortening fixed paths, and improving stability Effect
Active Publication Date: 2020-10-13
BEIHANG UNIV
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Problems solved by technology
However, at present, the electronic integration of image sensors and storage devices is still the mainstream of simulating human visual storage systems, and research on integrated devices is still relatively scarce.
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[0039] The present invention combines the attached Figure 1-6 In further detail, the embodiments are intended to facilitate the understanding of the present invention, and the specific structural details and functional details thereof are only for the purpose of describing the exemplary embodiments and do not have any limiting effect on them. Accordingly, the invention can be embodied in many possible forms and the invention should not be construed as limited to re-presented example embodiments only, but should cover all changes, equivalents and alternatives falling within the scope of the invention.
[0040] In this embodiment, based on the "top electrode / sawtooth structure nanowire layer / bottom electrode" structure, such as figure 1 As shown, the structure has a top electrode layer 201, a zigzag structure nanowire layer 101, and a bottom electrode layer 202 from top to bottom, wherein the zigzag structure nanowire layer 101 is composed of a plurality of nanowire structures...
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Abstract
The invention provides a flexible photoelectric sensing memristor based on sawtooth structure nanowires. The flexible photoelectric sensing memristor is characterized by structurally comprising a bottom electrode layer, a sawtooth structure nanowire layer and a top electrode layer in sequence from bottom to top. The sawtooth structure nanowire layer serves as a common layer of a resistance changing function and photoelectric sensing, the bottom end of the sawtooth structure nanowire is connected with one side of the bottom electrode layer, and the other end of the sawtooth structure nanowire is connected with one side of the top electrode layer. The memristor has the advantages that the memristor of the structure shows excellent memristive characteristics and optical signal driving resistance state conversion characteristics, and a research path is provided for mechanism exploration and device performance optimization of the memristor in the field of visual storage. And the structure stability is high, the electrical property is excellent, and the portability is high. The preparation method is simple, low in cost and excellent in performance, can be widely applied to the fields ofartificial retinas, artificial intelligence, portability, wearability and the like, and is beneficial to exploring a working mechanism of a novel visual storage system.
Description
technical field [0001] The invention relates to a flexible photoelectric sensing memristor based on nanowires with a sawtooth structure, and the device has stable, low energy consumption and memristive characteristics that can be driven by light pulses, and belongs to the technical field of visual memory devices. Background technique [0002] The visual memory of the human eye is formed by the retina receiving image information, which enables people to remember the impression of the image observed by our eyes. In recent years, the study of simulating the human visual system has made great progress, mainly using image sensor arrays to realize the recognition function of the human visual system to perceive images. Unfortunately, although current image sensor devices can recognize some designated images in real time, compared with human visual memory, there are few studies on the ability to retain and memorize detected image information even after removing external image stimul...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L45/00B82Y10/00B82Y20/00B82Y40/00
CPCB82Y10/00B82Y20/00B82Y40/00H10N70/257H10N70/8822H10N70/883H10N70/023Y02P70/50
Inventor 黄安平姬宇航高勤陈学良耿雪丽
Owner BEIHANG UNIV