System and method for accurately controlling gas pressure in crystal growth by PVT method

A technology of gas pressure and crystal growth, applied in crystal growth, single crystal growth, pipeline system, etc., can solve the problem of inability to accurately control gas pressure

Inactive Publication Date: 2020-10-20
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem that the existing PVT method crystal growth cannot accurately control the gas pressure, the present invention provides a system and method for accurately controlling the gas pressure of the PVT method crystal growth

Method used

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  • System and method for accurately controlling gas pressure in crystal growth by PVT method

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Experimental program
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Effect test

Embodiment 1

[0024] A system for precisely controlling the gas pressure of PVT crystal growth, including a crystal growth furnace 1, a nitrogen gas source branch 2, an argon gas source branch 3, an exhaust branch 4, and a monitoring host 5;

[0025] Nitrogen gas source branch 2 includes a nitrogen straight-through one-way gas path 201 and a nitrogen fine-control one-way gas path 202. The nitrogen straight-through one-way gas path 201 is provided with a first electric stop valve 601, and the nitrogen fine-control one-way The gas circuit 202 is provided with a first proportional valve 801, a first gas flow meter 701 and a second electric stop valve 602 in sequence according to the gas flow direction;

[0026] The argon gas source branch 3 includes an argon straight-through one-way gas path 301 and an argon precision-controlled one-way gas path 302. The argon straight-through one-way gas path 301 is provided with a third electric stop valve 603. The gas precision control one-way gas circuit 3...

Embodiment 2

[0037] This embodiment provides a method for precisely controlling the gas pressure of PVT crystal growth based on the precise control gas pressure system for PVT crystal growth provided in Embodiment 1.

[0038] Before the crystal growth starts, the gas pressure in the crystal growth furnace 1 is monitored by the gas pressure sensor 11, and the pressure signal is output to the monitoring host 5, and the monitoring host 5 outputs the execution signal to the first electric stop valve 601 and the third electric stop valve 603 , connected to the one-way gas path 201 for nitrogen gas and the one-way gas path 301 for argon gas respectively. According to the process gas pressure requirements, nitrogen gas and argon gas are introduced into the crystal growth furnace 1, and the first electric stop valve is closed after the gas pressure in the furnace is reached. 601 and the third electric stop valve 603;

[0039] During the crystal growth process, the vacuum pump 10 and the fifth elec...

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Abstract

The invention relates to a system and a method for accurately controlling gas pressure of PVT method crystal growth, belongs to the technical field of PVT method crystal growth, aims to solve the problem that gas pressure cannot be accurately controlled in crystal growth through an existing PVT method, and provides a system for accurately controlling the gas pressure of PVT method crystal growth.The system comprises a nitrogen gas source branch, an argon gas source branch and an exhaust branch which are communicated with a crystal growth furnace, wherein a precise proportional valve, a fifthelectric stop valve and a vacuum pump are arranged on the exhaust branch, a gas pressure sensor is further arranged on the crystal growth furnace and connected with a monitoring host, and the monitoring host is connected with the precise proportional valve, all the electric stop valves, a gas flow meter and a proportional valve. According to the invention, under the condition of continuous gas supply, gas pressure in a furnace and gas components in the furnace are kept constant, so that the stability of crystal growth is guaranteed.

Description

technical field [0001] The invention belongs to the technical field of PVT method crystal growth, and in particular relates to a system and method for precisely controlling the gas pressure of PVT method crystal growth. Background technique [0002] At present, the method of controlling the air pressure of PVT crystal growth equipment is generally to use a gas with a fixed air pressure in the furnace body, monitor the change of the air pressure through a sensor, and perform air extraction or replenishment to maintain the stability of the air pressure. In this way, on the one hand, AlN, Al, and N will be produced due to the sublimation of raw materials and heating insulation materials during the long-term crystal growth process inside the furnace body. 2 , Ta, C and other gases, resulting in uneven gas component ratios in the furnace body and large changes, which cannot guarantee the consistency of production experiments and affect the crystal growth rate and growth state. On...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00F17D1/02F17D3/01F17D1/065F17D5/00
CPCC30B23/002F17D1/02F17D1/065F17D3/01F17D5/005
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司
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