Epitaxial structure of GaN-based super-radiation light-emitting diode and application thereof
A technology of superluminescence and epitaxial structure, which is applied in the direction of diodes, electrical components, circuits, etc., and can solve problems such as difficult to achieve, narrow half-width of spectral luminescence, and small peak gain.
Inactive Publication Date: 2020-10-23
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology
However, using traditional multi-quantum wells as the active area of superluminescent light-emitting diodes usually has narrower half-width of spectral luminescence and smaller peak gain, and it is difficult to meet people's requirements for wide spectrum and high power of superluminescent light-emitting diodes. , high power, low operating current superluminescent light-emitting diode is extremely important, and it is also a problem that needs to be solved urgently in this field
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[0017] In view of the deficiencies in the prior art, the inventor of this case was able to propose the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows.
[0018] The luminescence principle of a superluminescent light-emitting diode (SLD) is shown in formula 1). It can be seen that the light output power Pout can be increased by increasing the limiting factor, increasing the material gain, reducing the internal loss of the material, etc., and by increasing the effective The half-width of the luminescence of the source region is implemented to increase the spectral half-width of the light source.
[0019] Pout=Psp·exp[(Γg 0 ηJ / d-α abs )L] 1)
[0020] Among them, Psp is the spontaneous emission power, Γgo is the mode gain, η is the quantum efficiency, J is the current density, d is the thickness of the active region, αabs is the abso...
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Abstract
The invention discloses an epitaxial structure of a GaN-based super-radiation light-emitting diode and application of the epitaxial structure. The epitaxial structure of the GaN-based super-radiationlight-emitting diode comprises a first optical limiting layer, a first waveguide layer, an active region, a second waveguide layer, an electron blocking layer and a second optical limiting layer whichare sequentially arranged in the thickness direction of the epitaxial structure, wherein the active region comprises at least one quantum well layer and at least one quantum barrier layer, and the active region adopts an InGaN / GaN quantum well growing in a two-dimensional island shape or a plurality of InGaN / GaN quantum wells with different thicknesses as the active region. According to the invention, the quantum wells growing in a two-dimensional island shape or the quantum wells with different widths are used as the active regions of the super-radiation light-emitting diode, so that the quantum wells of the super-radiation light-emitting diode have larger half width of a light-emitting spectrum, and the wide-spectrum super-radiation light-emitting diode can be obtained.
Description
technical field [0001] The invention relates to a superluminescent light-emitting diode, in particular to an epitaxial structure of a GaN-based superluminescent light-emitting diode and its application, belonging to the technical field of semiconductors. Background technique [0002] Superluminescent light-emitting diode is an important broadband light source, its optical properties are between light-emitting diode (LED) and semiconductor laser (LD), and it has the characteristics of high power and wide spectrum. At the same time, it also has the characteristics of weak time coherence and high fiber coupling efficiency. These characteristics make SLD devices a very competitive, low-cost, and high-reliability broadband light source in many application fields. The application of blue-green superluminescent light-emitting diodes mainly involves the two applications of optical coherence tomography (OCT) and fiber optic gyroscope (FOG), both of which take advantage of the wide sp...
Claims
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Login to View More IPC IPC(8): H01L33/00H01L33/06H01L33/32
CPCH01L33/0045H01L33/0075H01L33/06H01L33/32
Inventor 刘建平熊巍胡磊田爱琴杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI