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Composite piezoelectric substrate and preparation method thereof

A piezoelectric and substrate technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., to solve problems affecting production efficiency

Inactive Publication Date: 2020-10-23
JINAN JINGZHENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem in the prior art that when the composite piezoelectric substrate is prepared by the deposition method, it is necessary to frequently switch the deposition chamber, which affects the production efficiency

Method used

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  • Composite piezoelectric substrate and preparation method thereof
  • Composite piezoelectric substrate and preparation method thereof
  • Composite piezoelectric substrate and preparation method thereof

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preparation example Construction

[0033] In order to solve the problem in the prior art that when the composite piezoelectric substrate is prepared by the deposition method, the deposition chamber needs to be frequently switched and the production efficiency is affected, the present application provides a method for preparing a composite piezoelectric substrate, which includes the following steps:

[0034] Put the silicon wafer into the reaction furnace, alternately circulate the first reaction atmosphere and the second reaction atmosphere into the reaction furnace until the target composite piezoelectric substrate is prepared, and the target composite piezoelectric substrate is included in the In the silicon wafer, the first substrate layer and the second substrate layer are alternately stacked from the outer surface of the silicon wafer inward, wherein the first reaction atmosphere is an oxygen-containing atmosphere or a nitrogen-containing atmosphere, and the second The reaction atmosphere is an oxygen-conta...

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Abstract

The invention provides a composite piezoelectric substrate and a preparation method thereof. The method comprises the following step: alternately and circularly introducing a first reaction atmosphereand a second reaction atmosphere into a reaction furnace until the target composite piezoelectric substrate is prepared, wherein the target composite piezoelectric substrate comprises a first substrate layer and a second substrate layer which are arranged in the silicon wafer, are sequentially formed inwards from the outer surface of the silicon wafer and are alternately stacked; and the oxidizing temperature in the reaction furnace is 850-1200 DEG C when the oxygen-containing atmosphere is introduced into the reaction furnace, and the nitriding temperature in the reaction furnace is 1100-1400 DEG C when the nitrogen-containing atmosphere is introduced into the reaction furnace. In the preparation process, dozens to hundreds of silicon wafers can be placed in the reaction furnace, that is, dozens to hundreds of composite piezoelectric substrates can be prepared in each reaction furnace each time; and in the preparation process, only oxygen-containing atmosphere and nitrogen-containingatmosphere need to be alternately introduced into the reaction furnace, and the silicon wafers do not need to be moved, so that the production efficiency is greatly improved.

Description

technical field [0001] The application belongs to the field of semiconductor element preparation, in particular to a composite piezoelectric substrate and a preparation method thereof. Background technique [0002] The surface acoustic filter is a special filtering device made by using the piezoelectric effect of piezoelectric materials and the physical characteristics of surface acoustic wave propagation. The surface acoustic filter generally includes a composite piezoelectric substrate based on the basic structure design of the Bragg reflector, and a piezoelectric thin film layer laminated on the composite piezoelectric substrate, wherein the composite piezoelectric substrate generally includes alternately stacked first A substrate layer and a second substrate layer, the first substrate layer and the second substrate layer have different acoustic impedances, the piezoelectric thin film layer is used to transmit the acoustic wave signal, and the composite piezoelectric subs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/277H01L41/083H10N30/057H10N30/50
CPCH10N30/50H10N30/057
Inventor 李真宇杨超
Owner JINAN JINGZHENG ELECTRONICS
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