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Light-emitting device, light-emitting apparatus, electronic device, and lighting device

A light-emitting device, electronic technology, applied in the fields of machines, programs, products or compositions, and lighting devices, which can solve the problems of insufficient efficiency and high durability requirements

Pending Publication Date: 2020-10-23
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The characteristics of light-emitting devices have been significantly improved, but they are not enough to meet the high requirements for various characteristics such as efficiency and durability

Method used

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  • Light-emitting device, light-emitting apparatus, electronic device, and lighting device
  • Light-emitting device, light-emitting apparatus, electronic device, and lighting device
  • Light-emitting device, light-emitting apparatus, electronic device, and lighting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0120] Figure 1A A light emitting device according to one embodiment of the present invention is shown. A light emitting device according to one embodiment of the present invention includes an anode 101 , a cathode 102 , and an EL layer 103 . The EL layer includes a hole injection layer 111 , a hole transport layer 112 , a light emitting layer 113 and an electron transport layer 114 .

[0121] Note that although the Figure 1A In addition to the above, an electron injection layer 115 is shown in the EL layer 103 in , but the structure of the light emitting device is not limited thereto. A layer having other functions may be included as long as it has the above-mentioned constituent elements.

[0122] The hole injection layer 111 includes a first organic compound and a second organic compound. The first organic compound exhibits electron acceptability to the second organic compound. In addition, the second organic compound has a relatively deep HOMO level whose HOMO level...

Embodiment approach 2

[0173] Next, examples of the detailed structure and materials of the above-mentioned light-emitting device will be described. The light emitting device of one embodiment of the present invention as described above includes the EL layer 103 having a plurality of layers between a pair of electrodes (the anode 101 and the cathode 102 ). In this EL layer 103, a hole injection layer 111, a first hole transport layer 112-1, a second hole transport layer 112-2, a light emitting layer 113, and an electron transport layer 114 are provided from the anode 101 side.

[0174] There are no particular limitations on other layers in the EL layer 103, and various layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier blocking layer, an exciton blocking layer, and a charge generating layer can be used. layer.

[0175]The anode 101 is preferably formed using a metal, an alloy, a conductive compound, a mixture thereof, o...

Embodiment approach 3

[0198] In this embodiment mode, a light-emitting device including the light-emitting device described in Embodiment Mode 1 and Embodiment Mode 2 will be described.

[0199] In this embodiment, refer to Figure 2A and Figure 2B A light-emitting device manufactured using the light-emitting devices described in Embodiment Mode 1 and Embodiment Mode 2 will be described. Notice, Figure 2A is a top view showing a light emitting device, and Figure 2B is along Figure 2A A cross-sectional view cut along line A-B and line C-D in . This light-emitting device includes a driver circuit unit (source line driver circuit) 601 , a pixel unit 602 , and a driver circuit unit (gate line driver circuit) 603 indicated by dotted lines as a unit for controlling light emission of the light-emitting device. In addition, reference numeral 604 is a sealing substrate, reference numeral 605 is a sealing material, and the inside surrounded by the sealing material 605 is a space 607 .

[0200] Note...

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Abstract

A light-emitting device including an EL layer including a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side is provided. The first layer contains a first organic compound and a second organic compound. The light- emitting layer contains a sixth organic compound. The fourth layer contains a seventh organic compound. The first organic compound exhibits an electron-accepting property with respect to the second organic compound. A HOMO level of the second organic compound is higher than or equal to -5.7 eV and lower than or equal to -5.2 eV. A HOMO level of the third organic compound is equal to or deeper than the HOMO level of the second organic compound. A difference between the HOMO levels of the second organic compoundand the third organic compound is less than or equal to 0.2 eV. A LUMO level of the sixth organic compound is shallower than a LUMO level of the seventh organic compound.

Description

technical field [0001] Embodiments of the present invention relate to a light emitting device, a display module, a lighting module, a display device, a light emitting device, electronic equipment and a lighting device. Note that one embodiment of the present invention is not limited to the technical fields described above. The technical field of one embodiment of the present invention disclosed in this specification and the like relates to an object, method, or manufacturing method. One embodiment of the invention relates to a process, machine, manufacture or composition of matter. More specifically, as examples of the technical field of one embodiment of the present invention disclosed in this specification, semiconductor devices, display devices, liquid crystal display devices, light emitting devices, lighting devices, power storage devices, storage devices, imaging devices, etc. Devices, their driving methods, and their manufacturing methods. Background technique [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H10K99/00
CPCH10K50/11H10K2101/40H10K2101/30H10K59/12H10K50/171H10K50/17H10K85/636H10K85/633H10K85/6572H10K85/615H10K85/6576H10K85/6574H10K50/15H05B33/02H10K85/30H10K85/624H10K85/626H10K85/654H10K2101/10
Inventor 濑尾哲史铃木恒德奥山拓梦泷田悠介桥本直明濑尾广美
Owner SEMICON ENERGY LAB CO LTD