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Nitride power device and preparation method thereof

A technology for power devices and nitrides, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as deterioration of device dynamic characteristics.

Pending Publication Date: 2020-11-03
XIAMEN SANAN INTEGRATED CIRCUIT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method can avoid the introduction of parasitic capacitance, etching the trench will introduce a large number of defects at the etched surface, which will deteriorate the dynamic characteristics of the device.

Method used

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  • Nitride power device and preparation method thereof
  • Nitride power device and preparation method thereof
  • Nitride power device and preparation method thereof

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Embodiment Construction

[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0032] Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art wi...

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Abstract

The invention provides a nitride power device and a preparation method thereof, and belongs to the technical field of semiconductors. The nitride power device comprises a substrate, a channel layer and a barrier layer, wherein the channel layer and the barrier layer are sequentially formed on the substrate; a P-type nitride layer is locally formed on the barrier layer, a grid electrode is arrangedon the P-type nitride layer, a source electrode and a drain electrode are arranged on the barrier layer, the source electrode and the drain electrode are located on the two opposite sides of the P-type nitride layer respectively, and are each separated from the source electrode and the drain electrode at an interval. An ion implantation region is formed in the channel layer, the ion implantationregion is located in the orthographic projection of the interval region between the P-type nitride layer and the drain electrode on the channel layer, and negative ions are injected into the ion implantation region. The invention aims to provide the nitride power device and the preparation method thereof, and the nitride power device has high breakdown voltage and can avoid introduction of surfacedefects and parasitic capacitance so as to have good dynamic characteristics and power gain.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a nitride power device and a preparation method thereof. Background technique [0002] High-Electron-Mobility Transistors (HEMTs) have the characteristics of high two-dimensional electron gas (2DEG) density, high electron mobility and high breakdown electric field strength, and are suitable for the next generation of high-frequency high-voltage power switches. When high electron mobility transistors (HEMTs) on silicon nitride are used as power switches, their breakdown voltage (BV) is a key parameter. [0003] Since the maximum electric field at the terminal of the PN junction or Schottky junction is greater than the internal electric field, this peak electric field strength determines the breakdown voltage of the device. Therefore, increasing the breakdown voltage of the device mainly starts with reducing the electric field strength at the junction terminal position. At ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/778H01L21/335
CPCH01L29/0607H01L29/0684H01L29/7786H01L29/66462
Inventor 刘成田野何俊蕾赵杰郭德霄刘洋叶念慈
Owner XIAMEN SANAN INTEGRATED CIRCUIT
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