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A thin film structure on a heterogeneous substrate and its preparation method

A technology of heterogeneous substrates and thin-film structures, which is applied in semiconductor/solid-state device manufacturing, piezoelectric/electrostrictive/magnetostrictive devices, semiconductor devices, etc. Affect the uniformity of film peeling thickness, etc., to reduce the impact and improve the uniformity of thickness

Active Publication Date: 2021-04-27
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the annealing process, due to the difference in linear expansion coefficient, the bond formed by the heterogeneous substrate and the functional material substrate will bend, resulting in a difference in thermal stress in the functional material substrate, which in turn affects the uniformity of the peeled thickness of the film, such as figure 1 The thickness distribution diagram of the lithium tantalate film structure on the silicon substrate prepared by peeling off in the prior art shown

Method used

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  • A thin film structure on a heterogeneous substrate and its preparation method
  • A thin film structure on a heterogeneous substrate and its preparation method
  • A thin film structure on a heterogeneous substrate and its preparation method

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Embodiment 1

[0087] This embodiment discloses a method for preparing a thin film structure on a heterogeneous substrate, please refer to figure 1 and Figure 3-4 , the preparation method comprises the steps of:

[0088] S1: Provide thin-film material substrates and heterogeneous substrates;

[0089] Wherein, the thin film material substrate is a piezoelectric material wafer substrate, and the piezoelectric material wafer substrate is LiNbO 3 Substrate or LiTaO 3 Substrate; the heterogeneous substrate is a silicon substrate, a glass substrate, a silicon carbide substrate, a sapphire substrate or a silicon substrate with an oxide layer.

[0090] S2: Perform ion implantation on the piezoelectric material wafer substrate to form a defect layer; wherein, the implanted ions include one or more of hydrogen ions and rare gas ions, and the energy range of the implanted ions is 20keV-2000keV, The dose of implanted ions is 1e15-1e17.

[0091] S3: Obtain the diameter and thickness of the piezoele...

Embodiment 2

[0110] This embodiment discloses a method for preparing a thin film structure on a heterogeneous substrate, and the similarities with Embodiment 1 will not be repeated here. The difference between this embodiment and Embodiment 1 lies in:

[0111] In one embodiment, the preparation method also includes:

[0112] S16: Statistically calculate the temperature curve of the annealing temperature changing with time in steps S7-S15 in one preparation process.

[0113] S17: Provide a bonded body with the same or similar first modeling result, and control the annealing device to anneal the bonded body according to the above temperature curve, to obtain a piezoelectric material wafer film structure 4 on a heterogeneous substrate.

[0114] In another embodiment, the preparation method also includes:

[0115] S16: Statistically calculate the temperature curve of the annealing temperature changing with time in steps S7-S15 in the N times of preparation process, where N is greater than or ...

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Abstract

The invention relates to the technical field of thin film materials, in particular to a thin film structure on a heterogeneous substrate and a preparation method thereof, comprising: providing a bonding body, the bonding body includes a heterogeneous substrate layer and a thin film material bonded to the heterogeneous substrate layer The substrate layer has a defective layer in the thin film material substrate layer; obtaining a preset peeling stress, the preset peeling stress is the first maximum thermal stress at the defective layer in the thin film material substrate layer at the first annealing temperature; Under the condition of the first annealing temperature, the bonding body is annealed, so that the thin film material substrate layer begins to peel along the defect layer with the preset peeling stress; during the peeling process, the thin film material substrate layer is controlled by adjusting the annealing temperature to preset the peeling stress Peel off along the defect layer to obtain a thin film structure on a heterogeneous substrate. The invention can effectively reduce the influence of thermal stress difference on the film peeling thickness, and improve the thickness uniformity of the film structure on the heterogeneous substrate.

Description

technical field [0001] The invention relates to the technical field of thin film materials, in particular to a thin film structure on a heterogeneous substrate and a preparation method thereof. Background technique [0002] Smart-Cut is one of the main methods for preparing thin films of functional materials, such as preparing silicon thin film (SOI) wafers or piezoelectric material thin film (POI) wafers on heterogeneous substrates. In its preparation process, it is necessary to form a defect layer in the functional material substrate and perform annealing to peel off the functional material substrate to obtain a functional material thin film layer. However, during the annealing process, due to the difference in linear expansion coefficient, the bond formed by the heterogeneous substrate and the functional material substrate will bend, resulting in a difference in thermal stress in the functional material substrate, which in turn affects the uniformity of the peeled thickne...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/253H01L41/312H01L21/67H01L21/683H01L41/08H01L41/083H10N30/04H10N30/00H10N30/072H10N30/50
CPCH01L21/6835H01L21/67248H01L2221/68386H10N30/508H10N30/04H10N30/072H10N30/704
Inventor 欧欣陈阳黄凯赵晓蒙鄢有泉李忠旭
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD