Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method of preparing diamond by using boron carbide through microwave plasma

A microwave plasma and plasma technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as insoluble boron carbide

Active Publication Date: 2021-08-06
SHANGHAI ZHENGSHI TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, boron carbide is a solid substance in actual operation, and cannot enter the reaction chamber in a gaseous state at normal temperature and pressure; at the same time, boron carbide is insoluble in water, and most solvents cannot dissolve boron carbide
Therefore, it is difficult to directly use boron carbide as a boron-doped raw material for CVD diamond by using traditional methods.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method of preparing diamond by using boron carbide through microwave plasma
  • A method of preparing diamond by using boron carbide through microwave plasma
  • A method of preparing diamond by using boron carbide through microwave plasma

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0140] Microwave CVD system substrate table diameter is 60 mm, molybdenum disc-shaped metal container outer diameter is 60 mm, wall thickness is 3.0 mm, bottom thickness is 2.5 mm, depth is 5.0 mm; substrate material is diameter 30 mm, thickness 6.0 mm Circular monocrystalline silicon wafers, 8 jacks are symmetrically distributed on the bottom of the disc-shaped metal container with the center as the axis, the diameter of the jacks is 1.0 mm, and the depth is 1.0 mm. On a circle with a diameter of 42mm, this distance can ensure that there is an equal distance between the wire and the outer circle of the substrate material and the inner wall of the disc-shaped metal container. The length of the tungsten wire is 6.0 mm and the diameter is 1.0 mm; the wire It is uniformly filled with silicon carbide particles (99.9% pure) with a thickness of 3.0 mm.

[0141] (1) When high-purity hydrogen gas is introduced into the plasma reaction chamber until the vacuum degree is 1.5kPa, the mic...

Embodiment 2

[0146] Microwave CVD system substrate table diameter is 60 mm, molybdenum disc-shaped metal container outer diameter is 60 mm, wall thickness is 3.0 mm, bottom thickness is 2.5 mm, depth is 5.0 mm; substrate material is diameter 30 mm, thickness 6.0 mm Circular monocrystalline silicon wafers, four sockets are symmetrically distributed on the bottom of the disc-shaped metal container with the center as the axis, the diameter of the socket is 1.0 mm, and the depth is 1.0 mm. The sockets are symmetrically distributed on the center axis of the substrate table. On a circle with a diameter of 42mm, this distance can ensure that there is an equal distance between the wire and the outer circle of the substrate material and the inner wall of the disc-shaped metal container. The length of the tungsten wire is 6.0 mm and the diameter is 1.0 mm; the wire It is uniformly filled with silicon carbide particles (99.9% pure) with a thickness of 3.0 mm.

[0147] (1) When high-purity hydrogen ga...

Embodiment 3

[0152] Microwave CVD system substrate table diameter is 60 mm, molybdenum disc-shaped metal container outer diameter is 60 mm, wall thickness is 3.0 mm, bottom thickness is 2.5 mm, depth is 5.0 mm; substrate material is diameter 30 mm, thickness 6.0 mm Circular monocrystalline silicon wafers, 8 jacks are symmetrically distributed on the bottom of the disc-shaped metal container with the center as the axis, the diameter of the jacks is 1.0 mm, and the depth is 1.0 mm. On a circle with a diameter of 42mm, this distance can ensure that there is an equal distance between the wire and the outer circle of the substrate material and the inner wall of the disc-shaped metal container. The length of the tungsten wire is 6.0 mm and the diameter is 1.0 mm; the wire It is uniformly filled with silicon carbide particles (99.9% pure) with a thickness of 3.0 mm.

[0153] (1) When high-purity hydrogen gas is introduced into the plasma reaction chamber until the vacuum degree is 1.5kPa, the mic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
poweraaaaaaaaaa
poweraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing diamond by using boron carbide through microwave plasma. The above method includes: a pretreatment step: providing a substrate, uniformly placing solid boron carbide particles around the above substrate, and putting them into microwave plasma to react In the chamber; the nucleation step: using the first process parameter combination to generate plasma to bombard the above-mentioned solid boron carbide particles, so that diamond nucleates on the surface of the above-mentioned substrate; and the growth step: using the second process parameter combination to generate plasma to bombard the above-mentioned solid boron carbide particles Boron carbide particles are used to generate boron-doped diamonds on the surface of the substrate; wherein the combination of the first process parameters is different from the combination of the second process parameters. The present invention also provides boron-doped diamond prepared according to the above method. The method provided by the invention adopts cheap and safe boron carbide to prepare boron-doped diamond, thereby reducing process cost and improving process safety. The prepared boron-doped diamond has uniform texture, good performance and wide application.

Description

technical field [0001] The invention relates to the field of diamond preparation, in particular to a method for preparing diamond by using boron carbide through microwave plasma. Background technique [0002] Diamond, due to its very superior performance, has a wide range of applications in many fields. Natural diamonds are scarce and expensive, and it is difficult to meet the large demand in various fields. Synthetic diamonds prepared by the high temperature and high pressure method (HTHP method) also affect the properties of diamonds due to the presence of metal catalysts. At present, using microwave plasma chemical vapor deposition (MPCVD) technology, high-quality artificial diamond can be grown on the surface of substrate materials. [0003] A microwave plasma chemical vapor deposition device generally includes a microwave system, a vacuum system, a gas supply system and a plasma reaction chamber. A self-rotating substrate stage is arranged in the plasma reaction cham...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/517
CPCC23C16/274C23C16/276C23C16/278C23C16/517
Inventor 满卫东朱长征龚闯吴剑波
Owner SHANGHAI ZHENGSHI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com