Unlock instant, AI-driven research and patent intelligence for your innovation.

Infrared detector and preparation method thereof

An infrared detector and detector technology, applied in the field of infrared detection, can solve the problems of poor sensitivity of infrared detectors, poor infrared absorption rate of infrared detectors, etc., and achieve the effect of improving absorption rate, increasing intensity, and good absorption characteristics

Active Publication Date: 2021-07-13
BEIJING NORTH GAOYE TECH CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, non-contact infrared detectors, such as non-contact temperature sensors, absorb infrared radiation in the band of 8 microns to 14 microns, that is, the infrared absorption spectrum mostly shows a high absorption rate in the band of 8 microns to 14 microns. The infrared absorption within the band range only accounts for about 37% of the total emissivity of the target, and a large part of the infrared radiation cannot be absorbed by the infrared detector, resulting in poor infrared absorption rate of the infrared detector and poor sensitivity of the infrared detector

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared detector and preparation method thereof
  • Infrared detector and preparation method thereof
  • Infrared detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0068] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0069] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0070] figure 1 It is a schematic diagram of a three-dimensional structure of an infrared detector provided by an embodiment of the present disclosure, figure 2 A schematic diagram of a three-dimensional structure of a detector pixel provided by an embodiment of the present disclosure, image...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
thicknessaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The disclosure relates to an infrared detector and a preparation method thereof. The infrared detector includes a plurality of detector pixels arranged in an array, each detector pixel includes an electrode layer, and the electrode layer is provided with a plurality of linear strip structures and A plurality of folded strip structures, a plurality of straight line strip structures and a plurality of folded strip structures are alternately arranged along a direction perpendicular to the straight line strip structures; the infrared absorption spectrum of the infrared detector is in the band of 8 microns to 24 microns. Through the technical solution of the present disclosure, the broad-spectrum absorption of the infrared detector is realized, and the absorption rate of the infrared radiation energy of the temperature of the target object by the infrared detector is greatly improved, thereby enabling the infrared detector to have higher detection sensitivity.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector and a preparation method thereof. Background technique [0002] Non-contact infrared detectors include, for example, non-contact temperature measurement sensors. The detection principle is that the infrared detector converts the infrared radiation signal emitted by the target object to be measured into a heat signal, and converts the heat signal into an electrical signal through the detector sensitive element, and then The electrical signal is processed and output through the circuit chip. The absorption value of the infrared radiation signal by the infrared detector is very important as the initial signal of the infrared detector. The larger the signal value, the higher the sensitivity of the infrared detector. A very important parameter for the performance of the device. [0003] At present, non-contact infrared detectors, such as non-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/20G01J5/00
CPCG01J5/0003G01J5/20G01J2005/204
Inventor 魏斌翟光杰潘辉武佩
Owner BEIJING NORTH GAOYE TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com