Device and method for testing fatigue characteristics of gating tube

A technology of fatigue characteristics and gating tubes, applied in the field of memory, can solve the problems of long test time and high complexity

Active Publication Date: 2020-11-20
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the technical problems of high complexity and long test time in the control system used for the fatigue characteristic te

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for testing fatigue characteristics of gating tube
  • Device and method for testing fatigue characteristics of gating tube
  • Device and method for testing fatigue characteristics of gating tube

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] In the prior art, each reading of the RRAM needs to turn on the gating tube once, and the number of opening and closing times of the gating tube determines the actual service life of the RRAM device, reflecting the gating of the RRAM device. Tube fatigue properties. In the prior art, the test of the fatigue characteristics of the gating tube needs to use a pulse generator to perform a pulse operation on the device, and based on the pulse operation, read the resistance value of the gating tube in the open and closed states to verify the gating tube. On-off times, at the same time to determine whether the gate is invalid. Therefore, in the prior art, it is necessary to match the reading circuit and the judging circu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a device and method for testing the fatigue characteristics of a gating tube, and the device comprises a voltage dividing element and a counter, the voltage dividing element isconnected with a to-be-tested gating tube, and is used for dividing the voltage of the to-be-tested gating tube in a testing process; and the counter is connected with the gating tube to be detectedand is used for detecting the voltage and/or current change of the gating tube to be detected. A gating tube to be tested is used as a constituent part of an oscillator; the structure of the device issimpler, and complex circuit components such as a pulse generator and a judging circuit are omitted; in addition, periodic voltage and/or current oscillation is realized on the basis of the characteristics of the gating tube, so that the test period is shorter, the test time is saved, and the device is extremely simple in composition and extremely low in cost and has important commercial application value.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a device and method for testing the fatigue characteristics of a gate tube. Background technique [0002] Semiconductor memory can be divided into two categories according to whether it can retain stored information when power is off: volatile memory and non-volatile memory. With the popularity of portable electronic devices, the share of non-volatile memory in the memory market is also increasing. Currently, FLASH technology is the mainstream in the non-volatile memory market. However, FLASH technology is encountering a series of bottleneck problems such as high operating voltage, inability to reduce the size, and insufficient retention time. Correspondingly, resistive random access memory (RRAM) has become the research focus of new non-volatile memory due to its advantages of low operating voltage, non-destructive reading, fast operation speed, simple structure and easy integr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01R31/00
CPCG01R31/003
Inventor 罗庆吕杭炳余杰刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap