Crucible device for growing aluminum nitride crystals

Abstract

The invention provides a crucible device for growing aluminum nitride crystals. The crucible device comprises: a thermal insulation layer, wherein a cavity is formed in the thermal insulation layer, and the thermal insulation layer is provided with an opening communicated with the cavity; a crucible arranged in the cavity, wheren the top of the crucible is covered with a crucible cover, and the opening is formed corresponding to the crucible cover; and a temperature uniformizing device which coats the top surface of the crucible cover, wherein the temperature homogenizing device is also positioned in the cavity. The temperature uniformizing device can greatly reduce the radial temperature difference of crystals grown at the bottom of the crucible cover, so that the thermal stress in the crystals is reduced, the dislocation in the crystals is reduced, and the growth of large-size crystals is particularly facilitated.

Description

technical field [0001] The invention belongs to the technical field of thermal field design in crystal growth, and in particular relates to a crucible device for growing aluminum nitride crystals by a physical vapor transport method. Background technique [0002] Aluminum nitride is one of the most promising third-generation semiconductor crystal materials. It has a wide band gap, high thermal conductivity, high breakdown voltage, and only a small lattice and thermal expansion loss with other third-generation semiconductor materials. With other advantages. These advantages make it have great potential for development in high-power, high-frequency electronics and optoelectronic industries. Due to the extremely high melting point of aluminum nitride, it is difficult to prepare aluminum nitride crystals by conventional liquid phase methods. At present, the most widely used and most effective method for preparing aluminum nitride is the physical vapor transport method, also ca...

AI Technical Summary

Problems solved by technology

[0003] At present, the biggest problem in the field of preparing aluminum nitride single crystals is the inability to prepare large-size (4-inch) aluminum nitride crystals, which makes it impossible for large-scale commercial production of aluminum nitride crystals

The most fundamental reason for this problem is that as the size of the crystal increases, the size of the crucible required for its growth also increases.

Due to the use of induction heating, the heat distribution generated by the induced current inside the enlarged crucible will be more uneven, which will increase the radial temperature difference inside the crucible.

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