A kind of quartz tube assembly and its vacuum inspection method
An inspection method and technology for quartz tubes, applied in vacuum gauges, chemical instruments and methods, instruments, etc., can solve problems such as the inability to ensure that the vacuum in the quartz tube meets the requirements
Active Publication Date: 2021-04-13
北京智创芯源科技有限公司
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Problems solved by technology
Since the quartz sleeve is located inside the quartz tube, the outer diameter of the quartz sleeve is smaller than the inner diameter of the quartz tube. When sintering at high temperature, the sintering effect of the two can only be observed with the naked eye. During the cooling process, due to the stress of the quartz tube and the quartz sleeve The difference may cause a gap between the quartz sleeve and the quartz tube, and the vacuum in the quartz tube cannot be guaranteed to meet the requirements
Method used
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specific Embodiment approach
[0036] As a specific implementation, the quartz tube assembly to be inspected after obtaining the initial vacuum seal includes:
[0037] Step S1011: obtaining the quartz tube.
[0038] Step S1012: placing mercury at the bottom of the quartz tube, placing a wafer in the middle of the quartz tube, and putting the quartz sleeve into the top of the quartz tube to obtain a quartz tube assembly to be processed.
[0039] The wafer is a mercury cadmium telluride wafer.
[0040] It can be understood that the outer diameter of the quartz sleeve is smaller than the inner diameter of the quartz tube.
[0041] Step S1013: vacuumize the quartz tube assembly to be processed, so that the vacuum degree of the quartz tube assembly to be processed is the first vacuum degree.
[0042] Specifically, the vacuuming of the quartz tube assembly to be processed includes:
[0043] The quartz tube assembly to be processed is installed on the exhaust table of the high vacuum pump group, and the high va...
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The application discloses a quartz tube assembly and a vacuum inspection method thereof. The method includes obtaining the quartz tube assembly to be inspected after the initial vacuum sealing, and the quartz tube assembly has a first vacuum degree, wherein the quartz tube assembly includes a quartz tube, located in the quartz tube The mercury at the bottom, the wafer positioned at the middle of the quartz tube, and the quartz sleeve positioned at the top of the quartz tube; the quartz tube assembly is vacuumized to obtain the second vacuum degree of the quartz tube assembly after vacuuming again; compare the second vacuum degree with the The magnitude of the first vacuum degree; if the second vacuum degree is not greater than the first vacuum degree, the quartz tube assembly is qualified. In this application, after the quartz tube assembly to be inspected is obtained, the quartz tube assembly is vacuumized to obtain the second vacuum degree, and the influence of mercury volatilization on the vacuum is used to judge whether the sealing between the quartz tube and the quartz sleeve is tight. When the vacuum degree is not greater than the first vacuum degree, it indicates that there is no gap between the quartz sleeve and the quartz tube, and it is in a high vacuum state, and the inspection is qualified.
Description
technical field [0001] The present application relates to the technical field of quartz tube sealing, in particular to a quartz tube assembly and a vacuum inspection method thereof. Background technique [0002] Mercury cadmium telluride material is a kind of semiconductor material, which has the advantages of adjustable bandgap width, detection spectral range extending from short-wave band to very long-wave band, and high photoelectric detection efficiency. Material. In order to meet the performance of infrared focal plane detectors, heat treatment is usually used to adjust the stoichiometric ratio and composition of HgCdTe wafers. [0003] Heat treatment requires that the quartz tube must be in a vacuum environment, otherwise an oxide layer will be formed on the surface of the wafer. The oxide layer not only hinders the exchange of atoms inside and outside the surface layer, but also affects the adhesion of the surface film layer in the subsequent passivation process of t...
Claims
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IPC IPC(8): G01L21/00G01N7/00C30B33/02C30B29/46
CPCC30B29/46C30B33/02G01L21/00G01N7/00
Inventor 不公告发明人
Owner 北京智创芯源科技有限公司