A kind of semiconductor structure and preparation method thereof
A semiconductor and wire layer technology, applied in the field of semiconductor structure and its preparation, can solve the problems of affecting the life of the probe, damage, poor contact, etc.
Active Publication Date: 2021-02-09
晶芯成(北京)科技有限公司
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0002] At present, in the redistribution layer structure of the prior art, after the trench is formed, a metal layer is deposited into the trench. However, after the metal layer is deposited, there are pores at the top opening of the trench. In this way, on this basis, continue to deposit other semiconductor layers. When forming a notch for the insertion of probes during the wafer acceptance test (wafer acceptance test, WAT), during the etching process, due to the limitation of the pore structure, there will be Impurities remain on the sidewall of the notch, and the remaining impurities will damage the tip of the probe used in the wafer electrical test (wafer acceptance test, WAT), thereby affecting the life of the probe
In the subsequent packaging process, the residue of impurities will also lead to poor contact
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0058] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0059] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual impleme...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a semiconductor structure and a preparation method thereof, wherein the semiconductor structure comprises: a substrate; a wire layer located on the substrate; a dielectric layer located on the wire layer; a first trench located on the In the dielectric layer; the second groove is located on the first groove, the second groove communicates with the first groove, and the diameter of the top opening of the second groove is larger than that of the first groove The aperture of the top opening of the groove; the barrier layer is located on the dielectric layer and the wire layer; the metal layer is located on the barrier layer, and the metal layer is located on the first trench and the second trench within the slot; a plurality of protective layers on the metal layer; a notch in the plurality of protective layers, and the notch in the metal layer. The invention can effectively improve the situation that impurities remain on the sidewall of the notch.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a preparation method thereof. Background technique [0002] At present, in the redistribution layer structure of the prior art, after the trench is formed, a metal layer is deposited into the trench. However, after the metal layer is deposited, there are pores at the top opening of the trench. In this way, on this basis, continue to deposit other semiconductor layers. When forming a notch for the insertion of probes during the wafer acceptance test (wafer acceptance test, WAT), during the etching process, due to the limitation of the pore structure, there will be Impurities remain on the sidewall of the notch, and the remaining impurities will damage the tip of the probe used for wafer acceptance test (WAT), thereby affecting the life of the probe. In the subsequent packaging process, the residue of impurities will also lead to poor contact. ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/528H01L21/768
CPCH01L21/76816H01L21/76877H01L23/5283
Inventor 张国伟许宗能王建智
Owner 晶芯成(北京)科技有限公司