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Plasma processing device and plasma processing system including same

A technology of plasma and processing equipment, which is applied in the field of plasma processing systems, can solve problems such as poor performance, and achieve the effect of improving service life

Active Publication Date: 2020-12-22
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the performance of existing plasma processing equipment is poor

Method used

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  • Plasma processing device and plasma processing system including same
  • Plasma processing device and plasma processing system including same
  • Plasma processing device and plasma processing system including same

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] As stated in the background art, the performance of existing plasma processing equipment is relatively poor, which will be described in detail below:

[0034] figure 1 It is a structural schematic diagram of a plasma processing equipment.

[0035] Please refer to figure 1 , the plasma processing equipment includes: a substrate processing chamber 100; a gas supply unit (not shown in the figure), used to deliver reaction gas into the substrate processing chamber 100; a substrate located in the substrate processing chamber 100 Seat 101, the base 101 is used to carry the substrate to be processed; the insulating window 102 located at the top of the substrate processing chamber 100 and the induction coil 103 located on the insulating window 102; the vacuum pumping device 106, the pumping The vacuum device 106 is used to make the substrate processing chamber 100 a vacuum environment.

[0036] In the above plasma processing equipment, in order to reduce the influence of the...

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Abstract

A plasma processing device and a plasma processing system including the same, the plasma processing device including: a substrate processing chamber; a gas supply unit which is used for conveying reaction gas into the substrate processing cavity; a base which is positioned in the substrate processing cavity and is used for bearing a substrate to be processed; a first shell which is located on thesubstrate processing cavity and provided with a gas channel, wherein the gas channel is used for releasing first gas in the first shell; an inductance coil which is positioned in the first shell and is used for converting the reaction gas into plasma; a second shell which is located below the substrate processing cavity, wherein a port of the gas channel faces the second shell; a vacuumizing device which is located in the second shell and used for enabling the interior of the substrate processing cavity to be in a vacuum environment; and an air extractor which is located below the second shelland used for extracting the first air from the periphery of the second shell. The plasma processing device is good in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma processing device and a plasma processing system including the plasma processing device. Background technique [0002] With the improvement of the integration level of semiconductor devices, the line width of semiconductor devices is getting smaller and smaller, the control of critical dimensions is becoming more and more important, and the requirements for etching processes are also getting higher and higher. [0003] Etching process is a selective removal of substrate material to be processed. The etching process includes wet etching and dry etching. Dry etching has become one of the most commonly used etching processes today due to its high selectivity and strong controllability. [0004] Dry etching is plasma etching. Usually, an etching gas is introduced into the substrate processing chamber, and the etching gas is ionized to form plasma, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32522H01L21/67069
Inventor 范德宏左涛涛
Owner ADVANCED MICRO FAB EQUIP INC CHINA