Structure for optimizing writing performance of magnetic random access memory and preparation method thereof

A technology of random access memory and write performance, applied in static memory, digital memory information, manufacturing/processing of electromagnetic devices, etc., can solve problems such as limited write speed, difficulty in meeting cache, weak, etc., to reduce power consumption, improve Read and write speed, the effect of optimizing write performance
CN112186097APending Publication Date: 2021-01-05SHANGHAI CIYU INFORMATION TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI CIYU INFORMATION TECH
Publication Date
2021-01-05

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Abstract

The invention discloses a structure for optimizing the writing performance of a magnetic random access memory. The structure comprises a writing accelerator, the writing accelerator is positioned on the lower side of a bottom electrode of the magnetic random access memory and the upper side of a bottom electrode through hole, and the writing accelerator is directly connected with the bottom electrode and the bottom electrode through hole. The invention further discloses a preparation method of the structure for optimizing the writing performance of the magnetic random access memory. The preparation method comprises the following steps: 1, providing a CMOS substrate with a polished surface and a metal connecting line Mx; 2, manufacturing a bottom electrode through hole in the flattened CMOSsubstrate, and grinding the bottom electrode through hole; 3, on the bottom electrode through hole, performing graphical definition and etching to manufacture writing accelerator metal, filling a writing accelerator dielectric medium, and grinding the writing accelerator dielectric medium by adopting chemical mechanical planarization; and 4, sequentially depositing a bottom electrode, a magnetictunnel junction multilayer film and a top electrode on the writing accelerator, manufacturing a magnetic tunnel junction storage unit, and finally manufacturing bit line connection on the top electrode.
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Description

technical field

[0001] The invention relates to the technical field of Magnetic Random Access Memory (MRAM), in particular to a structure for optimizing the writing performance of Magnetic Random Access Memory (MRAM) and a preparation method thereof. Background technique

[0002] In recent years, MRAM using Magnetic Tunnel Junction (MTJ) is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich Structure, in which there is a magnetic free layer (Free Layer, FL), which can change the magnetization direction to record different data; the insulating tunnel barrier layer (Barrier Layer, BL) in the middle; the magnetic reference layer (Reference Layer, RL) is located On the other side of the tunnel barrier layer, its magnetization direction remains unchanged. Specifically, it can be the bottom pinning (Bottom Pinned) of the refe...

Claims

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