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A kind of large size x-axis ktp crystal and its growth method

A technology of crystal growth and large size, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of small size, and achieve the effect of improving utilization rate, shortening growth cycle, and increasing size

Active Publication Date: 2022-04-19
SHANDONG ZHONGSHAN PHOTOELECTRIC MATERIAL CO LTD
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Problems solved by technology

[0005] Aiming at the technical problem that the size of the KTP crystal in the X-axis direction is small in the existing flux method, the present invention provides a large-size X-axis KTP crystal and a growth method thereof. The method creatively selects the shape of the seed crystal and the direction of immersion in the flux, It can increase the growth rate of the X axis, so that the obtained KTP crystal has good optical uniformity, large size and higher utilization rate

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  • A kind of large size x-axis ktp crystal and its growth method
  • A kind of large size x-axis ktp crystal and its growth method

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Embodiment 1

[0024] Such as figure 1 , 2 Shown, a kind of large-scale X axis KTP crystal, the growth method of this crystal comprises the steps:

[0025] (1) Cut the seed crystal from the available X-axis KTP raw crystal blank, the X plane, Y plane and Z plane of the seed crystal are perpendicular to each other, and the seed crystal size is 20*4*4mm 3 (X*Y*Z) Finely chamfer the two sides of one of the seed crystals where the X surface and the Z surface intersect, and the angle between the chamfered side and the vertical direction is 45°;

[0026] (2) Based on KTP and K 6 P 4 o 13 The mass ratio of = 0.46:1, calculate the required KH 2 PO 4 、TiO 2 and K 2 CO 3 The masses are 2271g, 330g and 434g respectively, the KH 2 PO 4 、TiO 2 and K 2 CO 3 After fully and uniformly mixing, put it in a platinum crucible, first raise the temperature to 1000°C for full melting reaction, the reaction time is 6h, then raise the temperature to 1100°C for burning, the burning time is 12h, and then...

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Abstract

The present invention relates to the technical field of nonlinear crystal materials, in particular to a large-size X-axis KTP crystal and a growth method thereof. The large-size X-axis KTP crystal is obtained by the following growth method. The seed crystal is immersed in the melt to seed and grow, and the X, Y and Z surfaces of the seed crystal are perpendicular to each other, and the two sides where the X and Z surfaces immersed in the melt intersect are chamfered edges. The method of the invention creatively selects the shape of the seed crystal and the direction of immersion in the flux, which can increase the growth rate of the X-axis, so that the obtained KTP crystal has good optical uniformity, large size and higher utilization rate.

Description

technical field [0001] The invention relates to the technical field of nonlinear crystal materials, in particular to a large-size X-axis KTP crystal and a growth method thereof. Background technique [0002] Potassium titanyl phosphate (KTiOPO 4 , referred to as KTP) has excellent nonlinear optical properties and electro-optical properties. As a single crystal, KTP has excellent mechanical properties, chemical stability and high resistance to photodamage threshold. At present, KTP has been widely used as a commercial crystal in frequency doubling (SHG), sum (difference) frequency, optical parametric oscillation (OPO) and amplification (OPA) of small and medium power solid-state lasers. KTP is also an excellent candidate for electro-optic crystals, and has broad application prospects in laser modulation and other aspects. [0003] At this stage, the flux method is mostly used for KTP crystal growth, which has the advantages of mature and stable process, good crystal optica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/36C30B29/22
CPCC30B15/36C30B29/22
Inventor 谭云东张婷婷杜曰强方治文
Owner SHANDONG ZHONGSHAN PHOTOELECTRIC MATERIAL CO LTD