Single-energy attosecond positron string generation system and generation method thereof
A technology for generating systems and positrons, which is applied in the field of ions, can solve the problems of positron energy dissipation and difficulty in controlling the divergence angle, and achieve the effect of ensuring energy intensity
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Embodiment 1
[0039] The present invention designs a single-energy attosecond positron string generation system, including a Laguerre-Gaussian laser source, a columnar near-critical density target with a radial density gradient, and a Gaussian laser source. The Laguerre-Gaussian laser source The generated Laguerre Gaussian laser enters the near-critical density target through the first optical system, the Gaussian laser source generates ordinary Gaussian laser and enters the near-critical density target through the second optical system, and enters the Laguerre-Gauer Gaussian laser in the near-critical density target Opposite to ordinary Gaussian laser.
[0040] As a preferred setting scheme, the monoenergetic attosecond electron string generation system is mainly composed of three parts, one is the Laguerre-Gaussian laser source for generating Laguerre-Gaussian laser, and the other is for generating ordinary Gaussian laser Gaussian laser source, the third is a columnar near-critical densit...
Embodiment 2
[0047] This embodiment is further optimized on the basis of the foregoing embodiments, and the same parts as the foregoing technical solutions will not be repeated here, such as figure 1 As shown, further, in order to better realize the monoenergetic attosecond positron string generating system, the first optical system includes a Laguerre-Gaussian laser for generating a Laguerre-Gaussian laser source A concave mirror 101 for focusing, and a first reflector 102 for reflecting the Laguerre Gaussian laser focused by the concave mirror 101 into the near-critical density target; to the second reflector 111 in the near-critical density target; the Laguerre-Gauss laser generated by the Laguerre-Gauss laser source is focused by the concave mirror 101 and then reflected by the first reflector 102 and enters it through one end of the near-critical density target ; The ordinary Gaussian laser generated by the Gaussian laser source can pass through the second reflector 111 and enter it t...
Embodiment 3
[0050] This embodiment is further optimized on the basis of any of the above-mentioned embodiments, and the same parts as the aforementioned technical solutions will not be repeated here, such as figure 1 As shown, further, in order to better realize the monoenergetic attosecond positron string generating system, the near-critical density target adopts an optical axis relatively arranged between the first optical system and the second optical system The nozzles A106 and B107 on both sides are generated, and the density distribution of the near-critical density target along the axial direction is low in the middle and high on both sides.
[0051] When setting, the nozzle A106 and the nozzle B107 are arranged oppositely to generate a near-critical density target with a columnar band (preferably a cylindrical band) with a radial density gradient, and make the laser pass through the optical axis formed by the near-critical density target and the nozzle The relative position connec...
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