Backlight module and manufacturing method thereof

A technology for a backlight module and a manufacturing method, which is applied to the manufacturing of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of complex manufacturing process of light-emitting diode display devices, and achieves improving process efficiency, reducing etching times, and simplifying The effect of craft difficulty

Active Publication Date: 2021-02-02
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] This application provides a backlight module and its manufacturing method to solve the technical problems of complex manufacturing process of existing light-emitting diode display devices

Method used

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  • Backlight module and manufacturing method thereof
  • Backlight module and manufacturing method thereof
  • Backlight module and manufacturing method thereof

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Embodiment Construction

[0058] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0059] The manufacturing process of the existing backlight module usually requires multiple photomasks and multiple times of wet and dry etching to form, and too many times of etching increases the process difficulty of the backlight module, resulting in an increase in cost.

[0060] see figure 1 ~ Fig. 3, the present application proposes a manufacturing method of a backlight module 100, which includes:

[0061] S10, forming a first conductive layer 20 on the substrate 10, and ...

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Abstract

The invention provides a manufacturing method of a backlight module. The manufacturing method comprises the steps: forming a first conducting layer and a first insulating layer on a substrate; formingan active material layer on the first insulating layer; patterning the first insulating layer and the active material layer by using a multi-section mask plate so as to expose part of the first conducting layer and enable the active material layer to form an active member; and forming a third conducting layer on the active member to form a source electrode and a drain electrode of the backlight module. According to the invention, the openings of the active member and the first electrode of the binding terminal of the flexible circuit board are simultaneously formed by using the multi-sectionmask plate, so that the third conducting layer can simultaneously form the source and drain electrodes, the second electrode of the binding terminal of the flexible circuit board and the binding end of the light-emitting element, the etching frequency of a manufacturing process is reduced, the process difficulty of the backlight module is simplified, and the process efficiency is improved.

Description

technical field [0001] The present application relates to the display field, in particular to a backlight module and a manufacturing method thereof. Background technique [0002] The backlight module of the existing light-emitting diode display devices usually includes a driving circuit board and light-emitting diodes on the driving circuit board, such as Micro LED or Mini LED, so the structural design of the backlight module is particularly important in high-resolution products. [0003] Metal oxides have the advantages of high mobility, adaptability to low-temperature processes, excellent uniformity and surface flatness, so this material is often used in the production of backplanes. For the traditional back channel etching structure, it usually requires a 4-way photomask process, and two metal layers forming the bonding terminal are bridged by indium tin oxide. However, due to the large resistance of indium tin oxide and its easy aging, it leads to uneven display and dea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/12H01L27/15
CPCH01L27/124H01L27/1288H01L27/156
Inventor 刘俊领
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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