Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Insulated gate bipolar transistor and manufacturing method thereof

A technology of bipolar transistor and manufacturing method, applied in transistor, semiconductor/solid-state device manufacturing, semiconductor device and other directions, can solve the problem of not increasing off-time, etc., achieve low on-voltage drop and off-time, and enhance conductance Modulation effect, the effect of increasing the difference

Active Publication Date: 2021-02-02
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD +1
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there is still no suitable method to reduce the on-voltage drop without increasing the off-time, or to reduce the off-time without increasing the on-voltage drop

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Insulated gate bipolar transistor and manufacturing method thereof
  • Insulated gate bipolar transistor and manufacturing method thereof
  • Insulated gate bipolar transistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0096] Figure 7 A schematic structural diagram of an insulated gate bipolar transistor is shown. The insulated gate bipolar transistor includes: collector metal 0, P+ collector region 1, N-type main drift region 2, N+ type doped region 3, N-type transfer region 4, P-type body region 5, N+ emitter Pole region 6, emitter metal 7, gate layer 8, gate metal 9. Wherein, a positive sign (+) indicates a higher doping concentration, and a negative sign (-) indicates a lower doping concentration.

[0097] In this example, by means of ion implantation, regions with different doping concentrations are set in the drift region, that is, an N-type transfer region, an N-type main drift region, and an N+-type barrier region are formed to ensure that the lower part of the P-type body cell The N-type doping concentration of the N-type doping concentration is higher than that near the MOS channel part, which can effectively increase the recombination efficiency of holes in the drift region whe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses an insulated gate bipolar transistor and a manufacturing method thereof. The insulated gate bipolar transistor comprises a drift region and a body region, wherein the drift region comprises a first doped region and a second doped region, the first doped region and the second doped region are the same in doping type, and the doping concentration of the first doped region is greater than that of the second doped region; the body region different from the drift region in doping type comprises a first part and a second part; the first part is located between the first doped region and an emitter region and is in contact with the first doped region; and the second part is located between the second doped region and the gate region and is in contact withthe second doped region.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to an insulated gate bipolar transistor and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET The high input impedance of the device and the low turn-on voltage drop of the power transistor (ie giant transistor, referred to as GTR) are widely used in various fields. [0003] At present, there is still no suitable method to reduce the turn-on voltage drop without increasing the turn-off time, or to reduce the turn-off time without increasing the turn-on voltage drop. Contents of the invention [0004] In view of this, an embodiment of the present invention provides an IGBT and a manufacturing method ther...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/7395H01L29/0619H01L29/66333H01L29/739H01L29/06
Inventor 刘利书冯宇翔
Owner GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com