Unlock instant, AI-driven research and patent intelligence for your innovation.

Quantum dot film and its preparation method and application

A technology of quantum dots and quantum dot materials, applied in the field of quantum dot films and their preparation, can solve problems such as affecting the uniformity of pixel light emission, affecting the flatness of ZnO films or TFB films, etc.

Active Publication Date: 2022-03-29
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when ZnO or TFB is formed by the solution method, ZnO or TFB either causes serious accumulation on the edge of the pixel bank, affecting the uniformity of pixel light emission, or it is difficult to spread in the pixel bank, affecting the flatness of the ZnO film or TFB film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot film and its preparation method and application
  • Quantum dot film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0016] A method for preparing a quantum dot film, comprising the following steps:

[0017] Prepare raw materials: at least two quantum dot materials and at least two ligands, each of the quantum dot materials corresponds to at least one of the ligands, and the ligands corresponding to at least two quantum dot materials are different or Ligand sets are not identical;

[0018] The raw materials are mixed to obtain a solution, and after the solution is formed into a film, it becomes a quantum dot film;

[0019] Adjusting the mixing ratio of the quantum dot material, and / or adjusting the type of the ligand, is used to adjust the contact angle between the liquid on the surface of the quantum dot film and the surface of the quantum dot film.

[0020] Understandably, when a quantum dot material corresponds to a ligand, at least two quantum dot materials correspond to different ligands.

[0021] When one quantum dot material corresponds to two or more ligands, at least two quantum d...

Embodiment 1-3 and comparative example 1-5

[0080] Embodiment 1-3 and comparative example 1-5 provide a kind of preparation method of quantum dot film respectively, and its raw material is as follows:

[0081] A (CdSe / ZnS) quantum dot luminescent material R1 with a core-shell structure that emits red light; wherein the ZnS thickness is 5.0 nm; the ligand F1 corresponding to the quantum dot material R1 is oleic acid.

[0082]A (CdSe / ZnS) quantum dot luminescent material R2 with a core-shell structure that emits red light; wherein the thickness of ZnS is 3.5nm; the ligands F2 and F3 corresponding to the quantum dot material R2, F2 is trioctylphosphine, and F3 For oleylamine.

[0083] The above raw materials are mixed to obtain a solution, and then spin-coated on ITO to form a quantum dot film.

[0084] The weight ratios of R1 and R2 corresponding to Examples 1-3 and Comparative Examples 1-5 are shown in Table 1. Wherein, Comparative Example 1 and Comparative Example 5 only added one of the quantum dot luminescent materi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
current efficiencyaaaaaaaaaa
Login to View More

Abstract

The invention relates to a quantum dot thin film, a preparation method and application thereof. The preparation method includes the following steps: preparing raw materials: at least two quantum dot materials and at least two ligands, each quantum dot material corresponds to at least one ligand, and at least two quantum dot materials The ligands corresponding to the materials are different or the ligand groups are not completely the same; the raw materials are mixed to obtain a solution, and after the solution is formed into a film, it is a quantum dot film; the mixing ratio of the quantum dot material is adjusted, and / or Or, adjusting the type of the ligand is used to adjust the contact angle between the liquid on the surface of the quantum dot film and the surface of the quantum dot film. When an electron transport layer or a hole transport layer is formed by a solution method on the quantum dot film prepared by the above method, the electron transport layer and the hole transport layer have good film-forming uniformity and flatness, and improve the electron or hole transport layer. transmission capacity.

Description

technical field [0001] The invention relates to the technical field of electroluminescence, in particular to a quantum dot thin film and a preparation method and application thereof. Background technique [0002] Quantum Dots (QDs) materials have high luminous efficiency, continuously adjustable luminous wavelength, high color purity, and excellent stability, and have great application prospects in display and lighting. Quantum Dot Light Emitting Diodes (QLEDs) have the advantages of bright colors, high color purity, thinness, power saving, bendable curling, etc., and are used in small-sized to large-sized display panels. At present, the efficiency of QLEDs devices has been basically equivalent to commercial organic light emitting diodes (Organic Light Emitting Diodes, OLEDs), and the external quantum efficiencies of red and green QLEDs devices are both over 20%. [0003] For QLEDs, inkjet printing technology is the best solution to realize pixelated light-emitting display....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/02C09K11/88H01L27/32H01L51/50
CPCC09K11/025C09K11/883H10K59/35H10K50/115H10K50/11H10K2101/10
Inventor 庄锦勇
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD