Edge-emitting semiconductor laser and preparation method thereof
A technology of semiconductors and lasers, applied in the field of lasers, can solve the problems of high cost and poor stability of the external cavity collimation scheme, and achieve the effect of improving integration and stability
Pending Publication Date: 2021-02-09
浙江长芯光电科技有限公司
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Problems solved by technology
[0008] In view of the above defects or improvement needs of the prior art, the present invention provides an edge-emitting semiconductor laser and its preparation method, which solves the problems of poor stability and high cost of the external cavity collimation scheme, and realizes the laser beam of the high-power edge-emitting semiconductor laser Collimated output while improving device integration and stability
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[0034] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.
[0035] like figure 1 As shown, the manufacturing process of the edge-emitting semiconductor laser according to the embodiment of the present invention is as follows:
[0036] Step 1: Make an epitaxial wafer.
[0037] In some embodiments, the epitaxial wafer includes an N-type doped substrate and a stack disposed on the substrate. The plane where the substrate is located is defined as the X-Y plan...
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The invention discloses an edge-emitting semiconductor laser and a preparation method thereof. The edge-emitting semiconductor laser comprises an optical waveguide, a high-order aspheric fast-axis collimating mirror and a high-order aspheric slow-axis collimating mirror. The optical waveguide is provided with an N-type substrate layer, and the high-order aspheric fast-axis collimating mirror and the high-order aspheric slow-axis collimating mirror are both formed on the N-type substrate layer. The two high-order aspheric dielectric lenses are prepared at the front end of the optical waveguideof the laser through a semiconductor laser planar process, the divergence angles of the fast axis and the slow axis of the laser beam of the single-tube device are collimated, the collimated output ofthe laser beam of the high-power edge-emitting semiconductor laser is realized, and the integration level and the stability of the device are improved at the same time.
Description
technical field [0001] The invention belongs to the technical field of lasers, and more particularly, relates to an edge-emitting semiconductor laser and a preparation method thereof. Background technique [0002] High-power edge-emitting semiconductor lasers are laser devices that use III-V semiconductor materials as gain media. They have the advantages of high power, small size, and high electro-optical conversion efficiency. They have broad application prospects in laser processing, laser detection, laser countermeasures and other fields. . However, this semiconductor laser has a large difference in the size of the lateral (100-150 microns) and lateral (2-3 microns) waveguides, which leads to the problem that the emitted laser beam is elliptically distributed: the fast axis (ie the transverse waveguide mode) divergence angle is full angle Generally 52°~70°, the light field is Gaussian distribution of fundamental mode, the beam quality is good, close to the diffraction li...
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Patent Timeline
Login to View More IPC IPC(8): H01S5/20H01S5/02253H01S5/18
CPCH01S5/18H01S5/20H01S2304/00
Inventor 杨明来
Owner 浙江长芯光电科技有限公司