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Multi-linear array image sensor

An image sensor and line array image technology, applied in the field of sensors, can solve the problems of large chip area, severe chip, and deterioration of yield rate.

Active Publication Date: 2021-02-12
BRIGATES MICROELECTRONICS KUNSHAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a multi-line array image sensor, each line array has a separate analog-to-digital converter array corresponding to it, which leads to a very large chip area of ​​the multi-line array image sensor, and at the same time, the yield rate deteriorates very badly

Method used

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Embodiment Construction

[0016] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] This embodiment provides a multi-line array image sensor, including: a control unit, a set of column-parallel ADCs, and N line array image sensors, where N>1.

[0018] Each line image sensor includes: a pixel array and M output circuits, where M>1, the pixel array includes M columns of pixel units, and the M columns of pixel units correspond to the M output circuits one by one. The set of column-parallel ADCs includes M ADCs, and the M ADCs are connected to M output circuits in each line image sensor in one-to-one correspondence. The control unit is adapted to generate N sets of electrode signals, the nth line image sensor corresponds to the nth set of electrode signals, N≥n>1. There is a first time interval between the nth group o...

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Abstract

A multi-linear-array image sensor comprises a control unit, a group of column parallel ADCs and N linear-array image sensors, and N is larger than 1. Each linear array image sensor comprises a pixel array and M output circuits, M is greater than 1, the pixel array comprises M columns of pixel units, and the M columns of pixel units are in one-to-one correspondence with the M output circuits; the group of column parallel ADCs comprises M ADCs, and the M ADCs are connected with the M output circuits in each linear array image sensor in a one-to-one correspondence manner; the control unit is suitable for generating N groups of electrode signals, the nth linear array image sensor corresponds to the nth group of electrode signals, and N>=n>1; and a first time interval exists between the nth group of electrode signals and the n-1th group of electrode signals, the distance between the pixel array in the nth linear array image sensor and the pixel array in the n-1th linear array image sensor is a first interval, and the first interval is related to the size of the pixel unit and the first time interval.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a multi-line array image sensor. Background technique [0002] Solid-state image sensors are classified according to the type of imaging device, and are mainly divided into CCD (Charge Coupled Device) image sensors and CMOS (Complementary Metal Oxide Semiconductor) image sensors. Although these two devices are very different in technology, the basic imaging process is to convert the incident light signal into a charge signal, then convert the charge signal into a voltage or current signal, and finally output the converted electrical signal. [0003] According to the pixel arrangement structure in the solid-state image sensor chip, the image sensor can be divided into an area array image sensor and a line array image sensor. [0004] Such as figure 1 As shown, the area array image sensor directly captures the object through pixels arranged in a two-dimensional area array to obtain two-dim...

Claims

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Application Information

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IPC IPC(8): H04N5/369
CPCH04N25/70
Inventor 任张强
Owner BRIGATES MICROELECTRONICS KUNSHAN
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