A surface-emitting laser and its manufacturing method
A surface-emitting laser and low refractive index technology, which is applied in the field of semiconductor optoelectronic devices, can solve the problems of HCG-VCSEL design and production complexity, complex material growth, etc., to reduce material growth, increase single-mode output power, and increase output power. Effect
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Embodiment 1
[0033] figure 1 A cross-sectional view of a surface emission laser according to an embodiment of the present disclosure is shown.
[0034] Such as figure 1 As shown, the surface emission laser includes a substrate 2, a buffer layer 3, a multilayer structure 10, a material layer 7, a photonic crystal layer 8, and a P-type electrode layer 9, which are sequentially laminated from bottom to, wherein the multilayer structure 10 includes more. A low refractive index material layer 4, a plurality of high refractive index material layers 5, an active layer 6, and the active layer 6 is located on the last layer of low refractive index material; the back surface of the substrate 2 is provided with an N-type electrode layer 1 , The buffer layer 3, the plurality of low refractive index material layers 4, the plurality of high refractive index materials 5, and the horizontal direction width of the active layer 6 are equal, the horizontal direction of the material layer 7 and the photonic crys...
Embodiment 2
[0042] Figure 5 A cross-sectional view of a surface emission laser according to another embodiment of the present disclosure is shown.
[0043] Such as Figure 5 As shown, the difference from the embodiment and the first embodiment is:
[0044] The substrate 2, the buffer layer 3, the multilayer structure 10, the material layer 7, and the horizontal direction of the photonic crystal layer 8 are equal, and the P-type electrode layer 9 is located above the photon crystal layer 8, and is a ring structure, and the photonic crystal layer 8 is The corresponding material layer 7 corresponding to the photonic crystal structure 12 is etched to form the air region 11, the horizontal direction width of the air region 11 is larger than the horizontal direction width, which is equal to the thickness of the material layer 7, wherein the photon is equal to the thickness of the material layer 7, wherein the photon The crystal layer 8 has a GaAs-based one-dimensional cycle photonic crystal structu...
Embodiment 3
[0047] Figure 8 A cross-sectional view of a surface emission laser according to another embodiment of the present disclosure is shown.
[0048] Such as Figure 8 As shown, the difference from the embodiment and the first embodiment is:
[0049] The n-type electrode layer 1 is disposed on the upper surface of the substrate 2. The N-type electrode layer 1 is disposed on the upper surface of the substrate 2 to the back surface of the substrate 2, which can achieve a coplanar electrode, reducing the parasitic effect, facilitating improving the modulation speed.
[0050] Such as Figure 9 The plan view of the surface emission laser structure of the present embodiment is, and it is understood that the n-type electrode layer 1 is a ring electrode layer, and its inside and outside diameter is greater than the side length of the square buffer layer 3, which is co-hearted with other materials.
[0051] In some embodiments of the present disclosure, if the substrate 2 is not doped, the n-type...
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Abstract
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