Turning method of titanium target assembly

Abstract

The invention relates to a turning method of a titanium target assembly. The turning method comprises the following steps of cutting off a titanium ingot for plastic deformation; welding an obtained titanium target material blank with a back plate to obtain a titanium target material assembly crude product; then, sequentially performing rough turning and fine turning on a sputtering surface of thetitanium target blank in the obtained titanium target assembly crude product to obtain a titanium target material assembly; and wherein the to-be-machined allowance of the finish turning is 0.4-0.6mm, and the finish turning is divided into at least two times of turning. According to the turning method of the invention, a machining mode of sequentially carrying out rough turning and finish turningis adopted, the to-be-machined allowance of the finish turning is further limited, and turning is carried out in at least two times, so that the sputtering surface of the titanium target assembly canmeet the roughness requirement, the planeness can be guaranteed to be smaller than 0.1mm, surface stress is prevented from remaining, and the abrasion speed of a blade can be reduced.

Description

technical field [0001] The invention relates to the field of target processing, in particular to a turning method of a titanium target assembly. Background technique [0002] The magnetron sputtering coating process is to place the target and the wafer in the same vacuum-sealed environment, and fill the vacuum-sealed environment with inert gas argon, place the target on the positive pole, and place the wafer on the negative pole. Under the action of the electric field, the inert gas argon is ionized and decomposed into argon ions, and the argon ions bombard the surface of the target under the action of the electric field, so that the target atoms of the target are sputtered onto the wafer surface. Therefore, the surface quality of the target placed on the positive electrode is very important for the magnetron sputtering coating process, and generally meets various requirements such as size, flatness, purity, component content, density, grain size, and internal structure defe...

AI Technical Summary

Problems solved by technology

[0006] Although the above proposal discloses the machining of high-purity titanium targets and titanium target components, especially by turning, it only pays attention to the turning method of the welding surface where the high-purity titanium target is in contact with the back plate, and does not Turning method of sputtering surface of undisclosed high-purity titanium target

However, the current machining method for the sputtering surface of the high-purity titanium target only adopts the rough turning method, which not only easily leads to a compressive stress layer on the surface of the sputtering surface of the high-purity titanium target, but also causes the magnetron sputtering coating process Abnormal discharge phenomenon occurs in the middle, which seriously pollutes the chamber environment, even pollutes the wafer, and easily accelerates the wear speed of the blade.