A large-scale ruthenium-based alloy sputtering target and its preparation method

A technology for sputtering targets and alloys, which is applied in the field of powder metallurgy to achieve uniform structure, improved film thickness uniformity, and uniform phase distribution.

Active Publication Date: 2016-05-04
YUNNAN PRECIOUS METALS LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Document 4 (Journal "Rare Metal Materials and Engineering", 2009, 38(5): 909-913) discloses a mechanical alloying method to prepare Ru 50 Al 50 The method of alloy powder, which studies the phase transformation and grain change during the powder heat treatment process, does not involve the preparation of related targets

Method used

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  • A large-scale ruthenium-based alloy sputtering target and its preparation method
  • A large-scale ruthenium-based alloy sputtering target and its preparation method
  • A large-scale ruthenium-based alloy sputtering target and its preparation method

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Embodiment 1

[0034] Ru of the present invention 51 Al 49 Alloy targets are prepared by the following methods:

[0035] (1) Raw material preparation: choose Ru and Al above 3N5 as raw materials;

[0036] (2) Preparation of alloy powder: according to Al 6 Ru or Al 13 Ru 4 The stoichiometric ratio of the intermetallic compound is 10-20Kg, and the vacuum gas atomization method is used to prepare the alloy powder. The material is melted in a vacuum medium frequency induction melting furnace, and the melting temperature is 1000-1600 ° C. The alloy solution is transferred into the tundish to start the gas Atomization, the atomization pressure is 5-8MPa. In order to avoid the introduction of impurities during the atomization process, high-purity argon gas above 4N is selected as the atomization gas. After the atomization is completed, it is sieved by a standard sieve, and the alloy powder below 100 μm is selected;

[0037] (3) Jet mill treatment: The atomized powder is subjected to jet mill t...

Embodiment 2

[0041] The difference from Example 1 is that the ruthenium-based alloy target is Ru 51 co 49 , the raw materials are Ru and Co above 3N5, and the stoichiometric ratio of the alloy powder is Ru in the hexagonal close-packed phase 3 co 7 , the melting temperature is 1600-1800°C, Ru 3 co 7 It is mixed with Ru powder according to the ratio of Ru51Co49, and the sintering temperature is 1100-1300°C.

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Abstract

The invention discloses a large-sized ruthenium-based alloy sputtering target and a preparation method thereof. The ruthenium-based alloy target comprises one or more of Al, Co, Cr and the like and the balance of Ru and is in a cake shape, wherein the diameter of the target is not less than 100mm, the density is not less than 99.5%, the density difference between the central zone and the marginal zone of the target does not exceed 0.3%, and a second phase formed by the Ru and other alloy elements is uniformly distributed in an Ru matrix phase. The preparation method for the ruthenium-based alloy sputtering target comprises the steps of preparing brittle phase ruthenium-based alloy powder with relatively low melting point through a gas atomization method, treating the brittle phase through an air-current mill to obtain fine and uniform alloy powder, and sintering the powder to obtain the ruthenium-based alloy target of which the diameter is more than 100mm. The alloy target is low in impurity content, high and uniform in density, uniform in component distribution and fine and uniform in grains, a coating sputtered by using the target is uniform in thickness and stable in performance, and the phenomena of abnormal discharge and the like in the sputtering process are reduced.

Description

technical field [0001] The invention belongs to the technical field of powder metallurgy, and in particular relates to a large-size ruthenium-based alloy sputtering target and a preparation method. Background technique [0002] Ru and Ru-based alloy materials are widely used in the manufacture of many electronic products, such as the intermediate transition layer in high-density perpendicular magnetic recording media, the coupling layer in high-performance, high-area recording density antiferromagnetic coupling magnetic recording media And as an adhesion layer / seed layer in copper-based back-end metallization systems for high-integration-density semiconductor integrated circuit devices. These thin film layers are generally formed using Ru or Ru-based alloy targets as raw materials by sputtering deposition techniques such as magnetron sputtering. Generally speaking, these applications require that the sputtering target used has less impurity content, uniform structure compos...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/14B22F9/08B22F3/16
Inventor 谭志龙王传军张俊敏闻明毕珺沈月宋修庆管伟明郭俊梅
Owner YUNNAN PRECIOUS METALS LAB CO LTD
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