Semiconductor integrated circuit device and manufacturing method thereof

Abstract

The present invention discloses a semiconductor integrated circuit device and a method of manufacturing the same. The semiconductor integrated circuit device comprises: a first electrode having a raised bulk structure; a resistance change layer covering the upper surface and the side surface of the raised bulk structure; an oxygen storage layer covering the upper surface and the side surface of the resistance change layer, wherein the thickness of the oxygen storage layer at the upper corner of the raised bulk structure is larger than that of the oxygen storage layer at other positions; and asecond electrode covering the upper surface and the side surface of the oxygen storage layer. Due to the fact that the electric field distribution of the raised bulk structure at the corner of the raised bulk structure is more concentrated, and the oxygen storage layer at the position is thicker, conductive filaments are easier to generate, so that the forming position of the conductive filament can be controlled in the area, the process of damaging the side wall of the resistance change layer in the manufacturing process of the semiconductor integrated circuit device is avoided, and the forming stability of the conductive filament is further improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a resistive random access memory (RRAM) and a manufacturing method thereof. Background technique [0002] Resistive Random-Access Memory (RRAM) is a new type of non-volatile memory, which uses certain thin film materials to exhibit different resistance values ​​(high resistance state HRS and low resistance state LRS) under the operation of an applied electric field. ), so as to achieve the purpose of storing data. The advantage of RRAM is that it has a simple structure, high integration, and can be integrated between a certain metal layer of the metal interconnection in the subsequent process. [0003] The RRAM structural unit is usually a sandwich structure, that is, composed of upper and lower metal electrodes and an intermediate insulating dielectric layer. The conductive filaments formed by oxygen vacancies are formed in the dielectric layer, and then driven by the forw...

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Problems solved by technology

[0004] However, this structure has the following defects: 1) In the process of defining the size and shape of the RRAM unit, its edges will be damaged by the etching process, resulting in more defects, resulting in its conductive filaments being more likely to be distributed on the edge of the RRAM, and the conductive filaments It is more susceptible to the influence of external factors, which will make the distribution of high and low resistance states of RRAM scattered, and the storage window will become smaller; 2) The position and direction of the formation of conductive filaments are very random, which will cause the discreteness of the transformation parameters of RRAM devices.

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