IPD absorption band-pass filter

Abstract

The invention relates to an IPD absorption band-pass filter and belongs to the technical field of filters. The sensor comprises a substrate layer and a back gold layer on the lower surface of the substrate layer, wherein a first silicon nitride layer grows on the substrate layer, a thin-film resistance layer is sputtered on the first silicon nitride layer, a first metal layer is formed on the first silicon nitride layer, a second silicon nitride layer grows on the first metal layer, and a polyimide layer grows on the second silicon chloride layer; a second metal layer is formed on the polyimide layer, a third silicon nitride layer grows on the second metal layer, and a filter circuit structure is formed on the first metal layer and the second metal layer; the filter circuit structure comprises a first band-pass signal processing unit, a second band-pass signal processing unit and an LC parallel resonance circuit which are connected in series between an input port and an output port, anIPD-GaAs process is adopted, the absorption type filter circuit structure is manufactured on a GaAs substrate through photoetching, sputtering, electroplating, etching and other procedures, and the effect of high stop band suppression is achieved.

Description

technical field [0001] The invention relates to an IPD absorption bandpass filter, which belongs to the technical field of filters. Background technique [0002] With the rapid development of communication technology, communication systems have higher and higher requirements for high-performance and miniaturized passive components. Band-pass filters are one of the important electronic components of communication devices, and the performance of band-pass filters directly affects communication systems. performance. Stopband "attenuation" signals in conventional bandpass filters are reflected back to the signal source, however, these reflections can adversely affect the overall RF system. For example, mixers are extremely sensitive to out-of-band terminations on their ports, yet filters are frequently present at the front and back ends of mixers. Intermodulation products attenuated by the filter are reflected back to the mixer and may generate unwanted harmonics that can caus...

AI Technical Summary

Problems solved by technology

For example, a low-pass prototype filter and its complementary high-pass filter are connected in parallel to form a complementary duplexer to absorb the stopband signal, but this will require a large space and cause impedance mismatch

Adding two traditional microstrip comb-line bandpass filters between two microstrip 3dB directional couplers can also absorb stopband signals, but the width of the bridge limits the bandwidth of the filter

Connect two equal-phase power dividers at the input and output terminals, and then connect +45 degree high-pass phase shifter, traditional band-pass filter, -45 degree in series to the upper and lower paths between the two power dividers. A low-pass phase shifter, which realizes the phase cancellation function of the input signal and the reflected signal at the input end, although it achieves the effect of absorbing the reflected signal, but requires a large number of circuit components, so for the current miniaturization needs, the lumped circuit It is hindered by the layout and component interaction of the

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