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Plasma treatment device

A plasma and processing device technology, which is applied in the field of plasma processing devices, can solve the problems of uneven film forming rate and film thickness, and achieve the effect of uniform film forming rate and uniform film thickness

Pending Publication Date: 2021-02-26
NISSIN ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, in the above-mentioned plasma processing apparatus, since the magnitude of the current flowing in each part in the longitudinal direction of the high-frequency antenna is different, there is a problem that the film formed on the substrate housed in the vacuum container film formation rate or film thickness becomes non-uniform

Method used

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Experimental program
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Embodiment Construction

[0036] (Configuration of plasma processing apparatus 1)

[0037] figure 1 (a) is a bottom view showing the configuration of the plasma processing apparatus 1 according to Embodiment 1 of the present invention, figure 1 (b) is a diagram showing the arrangement relationship between the antenna 20 and the gas ejection port 30 . also, figure 1 (a) shows the state of the vacuum vessel 10 other than the bottom surface. in addition, figure 1 (a) and figure 1 In (b), the substrate 40 and the substrate holder 50 to be described later are omitted.

[0038] figure 2 (a) means figure 1 (a) is a cross-sectional view showing the configuration of the cross-section of the plasma processing apparatus 1 on the line L1 shown in (a), figure 2 (b) means figure 1 (a) is a cross-sectional view showing the configuration of the cross-section of the plasma processing apparatus 1 on the line in the longitudinal direction D1. In addition, in the plasma processing apparatus 1 , the side where ...

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Abstract

The purpose of the present invention is to provide a plasma treatment device with which, for a film formed on a substrate, a film deposition rate and film thickness can be made uniform. The plasma treatment device (1) is provided with: multiple plasma-generating antennas (20) disposed inside a vacuum chamber (10); and multiple groups of gas injection ports (30) disposed in the vicinity of lines (L1) substantially perpendicular to the longitudinal directions (D1) of the multiple antennas (20) and extending in a direction in which the multiple antennas (20) are arranged with respect to each other. The plasma treatment device is further provided with a gas flow rate control unit for controlling flow rates of gas to be injected from the groups of gas injection ports (30).

Description

technical field [0001] The invention relates to a plasma processing device. Background technique [0002] A plasma processing apparatus that performs film formation or etching by generating inductively coupled plasma is known in the art. Such a plasma processing apparatus includes, for example, the plasma processing apparatus disclosed in Patent Document 1. [0003] The plasma processing apparatus disclosed in Patent Document 1 includes a high-frequency antenna disposed in a vacuum chamber that is evacuated and introduced into a gas. In the plasma processing apparatus, gas is introduced through a plurality of gas introduction ports arranged in a direction along the radio-frequency antenna. The plasma processing apparatus processes a substrate stored in a vacuum container. [0004] prior art literature [0005] patent documents [0006] Patent Document 1: Japanese Patent Laid-Open No. 2016-149287 (published on August 18, 2016) Contents of the invention [0007] The pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46C23C14/54C23C16/455C23C16/509C23C16/52H01L21/205H01L21/3065
CPCH05H1/46C23C16/52C23C16/509H01L21/3065H01J37/32449H01J37/3211C23C16/45565H01J37/32458H01J2237/3321H01J2237/3341H01J2237/3323
Inventor 酒井敏彦东大介中田誓治安东靖典
Owner NISSIN ELECTRIC CO LTD