Temperature control method and device of immersion lithography machine

Abstract

The invention provides a temperature control method and device for an immersion lithography machine, and the method comprises the steps: carrying out the heat exchange between a PCW and a lithographymachine UPW through a heat exchanger, heating the UPW through a heater, so as to heat the UPW, and carrying out the rough adjustment of the temperature of the UPW, determining a UPW temperature track,a PCW flow control model and a heater power control model based on the detected three temperature values and the UPW temperature control target; adaptively correcting a flow control model of the PCWand a power control model of the heater by adopting a fuzzy rule; introducing the coarsely adjusted UPW into a photoetching machine through a remote transmission pipeline, dividing the UPW into two paths of UPW injection liquid after being adjusted by a semiconductor chilling plate, and respectively heating the two paths of UPW injection liquid through two heaters; and when the UPW temperature isfinely adjusted, the adjustment amount of the refrigeration sheet is determined by the power of the two heaters for two paths of UPW liquid injection, the flow of the two paths of UPW liquid injectionand the temperature set values of the two paths of UPW liquid injection. According to the invention, the temperature control precision of the photoetching machine is improved.

Description

technical field [0001] The invention belongs to the field of temperature control of an immersion photolithography machine, and more particularly relates to a temperature control method and device of an immersion photolithography machine. Background technique [0002] The immersion lithography machine is filled with immersion liquid between the last projection objective lens and the silicon wafer. According to the Rayleigh criterion The temperature change of the immersion liquid will directly cause the change of the refractive index and viscosity of the immersion liquid, which will lead to the offset of the exposure focal plane and the change of the numerical aperture NA value, thereby reducing the resolution of the lithography machine and increasing the depth of focus; On the one hand, the temperature change of the immersion liquid will lead to the temperature change of the silicon wafer and the projection objective lens, which will cause optical imaging aberration, which ...

AI Technical Summary

Problems solved by technology

[0005] In view of the defects of the prior art, the purpose of the present invention is to provide a temperature control method and device for an immersion lithography machine, aiming at solving the problem of the lack of secondary temperature control

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