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Welding and shaping integrated method for circular titanium target material and back plate

A titanium target and round technology, which is applied in the field of welding and shaping integration of round titanium targets and backing plates, can solve the problems of reduced shaping qualification rate, cumbersome operation, energy consumption and other problems, and avoid shaping operations, The effect of increasing the contact area, improving the welding pass rate and shaping pass rate

Pending Publication Date: 2021-03-09
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Although diffusion welding helps to reduce the deformation of the titanium target assembly and improve the welding bond between the titanium target and the back plate, it has the disadvantages of energy consumption, high cost, and cumbersome operation.
Although the brazing operation temperature is low and the holding time is short, it has the advantages of low cost and simple operation, but the deformation of the titanium target assembly is relatively large
However, regardless of diffusion welding or brazing, the deformation of the titanium target assembly obtained by welding is still relatively large, and an additional shaping operation by a hydraulic press is still required to ensure the flatness requirements of the titanium target assembly, but large areas often appear after shaping. Welding defects, even desoldering problems, resulting in a greatly reduced plastic pass rate

Method used

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  • Welding and shaping integrated method for circular titanium target material and back plate
  • Welding and shaping integrated method for circular titanium target material and back plate
  • Welding and shaping integrated method for circular titanium target material and back plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] This embodiment provides an integrated method for welding and shaping a circular titanium target and a back plate. The diameter of the circular titanium target is 300 mm. The integrated method includes the following steps:

[0067] (1) First heat the round titanium target 1 with a purity of 99.999% to 235°C and keep it warm, then place the solder on the welding surface of the round titanium target 1 to melt the solder, and then use The lead-free steel brush infiltrates the welding surface of the circular titanium target 1 maintained at 235°C and the molten solder;

[0068] First heat the CuZn alloy backplane 2 to 235°C and keep it warm, then place the solder on the welding surface of the CuZn alloy backplane 2 to melt the solder, and then use a lead-free steel brush to keep the temperature at Wetting the welding surface of the CuZn alloy backplane 2 and the molten solder at 235°C, and then ultrasonically treating the welding surface of the CuZn alloy backplane 2 and the...

Embodiment 2

[0074] This embodiment provides an integrated method for welding and shaping a circular titanium target and a back plate. The diameter of the circular titanium target is 300 mm. The integrated method includes the following steps:

[0075] (1) First heat the round titanium target 1 with a purity of 99.995% to 220°C and keep it warm, then place the solder on the welding surface of the round titanium target 1 to melt the solder, and then use The lead-free steel brush infiltrates the welding surface of the circular titanium target 1 maintained at 220°C and the molten solder;

[0076] First heat the CuCr alloy backplane 2 to 220°C and keep it warm, then place the solder on the welding surface of the CuCr alloy backplane 2 to melt the solder, and then use a lead-free steel brush to keep the temperature at Wetting the welding surface of the CuCr alloy backplane 2 and the molten solder at 220°C, and then ultrasonically treating the welding surface of the CuCr alloy backplane 2 and the...

Embodiment 3

[0082] This embodiment provides an integrated method for welding and shaping a circular titanium target and a back plate. The diameter of the circular titanium target is 300 mm. The integrated method includes the following steps:

[0083] (1) First heat the round titanium target 1 with a purity of 99.999% to 250°C and keep it warm, then place the solder on the welding surface of the round titanium target 1 to melt the solder, and then use The lead-free steel brush infiltrates the welding surface of the circular titanium target 1 maintained at 250°C and the molten solder;

[0084] First heat the CuZn alloy backplane 2 to 250°C and keep it warm, then place the solder on the welding surface of the CuZn alloy backplane 2 to melt the solder, and then use a lead-free steel brush to keep the temperature at Wetting the welding surface of the CuZn alloy backplane 2 and the molten solder at 250°C, and then ultrasonically treating the welding surface of the CuZn alloy backplane 2 and the...

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Abstract

The invention relates to a welding and shaping integrated method for a circular titanium target material and a back plate. The integrated method comprises the steps that molten welding flux is arranged on the welding face of the circular titanium target material and the welding face of the back plate in an infiltrating manner, the welding faces of the circular titanium target material and the backplate are attached, and the circular titanium target material is located above the back plate; a cushion block is placed above the circular titanium target material, and pressurization operation is carried out above the cushion block; and pressurizing operation is removed after cooling, and a circular titanium target material assembly is obtained. According to the integrated method, the flatnessof the circular titanium target material can be corrected while welding is conducted, subsequent additional shaping operation is avoided, meanwhile, the welding combination degree requirement and theflatness requirement of the circular titanium target material assembly are met, the welding combination degree is larger than or equal to 99%, the flatness is smaller than or equal to 0.3 mm, and meanwhile the welding percent of pass and the shaping percent of pass are increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and relates to a welding method of a target assembly, in particular to an integrated welding and shaping method of a circular titanium target and a back plate. Background technique [0002] At present, high-purity titanium targets are widely used in the manufacture of semiconductor chips, such as conductive plug metal filling, metal electrode film deposition, etc. Since the back plate can provide support for the sputtering target and has the effect of conducting heat, generally the sputtering target and the back plate need to be welded and processed into a sputtering target assembly. For high-purity titanium targets, the back plate is mainly an aluminum alloy back plate, that is, the welding of Ti / Al is relatively mature. However, when the sputtering power of the titanium target is high and the sputtering conditions are very extreme, a copper alloy with higher strength and better electric...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K1/08B23K1/06B23K3/00B23K3/08B23P23/00B21D1/00
CPCB23K1/08B23K1/06B23K3/00B23K3/085B23P23/00B21D1/00B23K2101/40
Inventor 姚力军边逸军潘杰王学泽吴福安叶裕辉
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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