Optical quasi-focus structure for mems probe laser etching device

Abstract

The optical quasi-focus structure for the MEMS probe laser etching device of the present invention belongs to the technical field of semiconductor processing and testing; the optical quasi-focus structure is used in the MEMS probe laser etching device, and the spiral channel plate is replaced by an upper straight slot plate , replace the straight slot plate with the next slot plate, and replace the monocrystalline silicon wafer with a plane mirror of the same thickness, the upper surface of the upper slot plate is closely connected to the lower surface of the next slot plate paste; between the next word through groove plate and the objective lens, a prism is arranged, and an image sensor is arranged on the side edge of the prism, and along the optical axis direction, the distance from the highest point of the arc-shaped light source to the prism is the same as the distance from the image surface of the image sensor to the prism The distance is the same; the optical quasi-focus structure for the MEMS probe laser etching device of the present invention is used in the MEMS probe laser etching device and method disclosed in the present invention, not only the etching precision is higher, and the etching distance can be continuous adjust.

Description

technical field [0001] The optical quasi-focus structure for a MEMS probe laser etching device of the invention belongs to the technical field of semiconductor processing and testing. Background technique [0002] The probe card is a test interface used to test the bare core. By directly contacting the probes on the probe card with the pads or bumps on the IC chip, the IC chip signal is drawn out, and then cooperates with the test instrument to write to the IC chip. Input the test signal, and then realize the test before IC chip packaging. [0003] One of the core structures of the probe card is the probe. At present, there are two methods of making probes: bottom-up and top-down. [0004] Bottom-up plating method: [0005] CN201010000429.2, a microprobe structure and its manufacturing method, using the lithography, electroplating, planarization and etching technologies of the semiconductor manufacturing process, and replacing the electroplating second sacrificial layer m...

AI Technical Summary

Problems solved by technology

However, in order to realize the preparation of smaller-sized probes and ensure higher etching precision in this process, the cost of process equipment used will increase exponentially. Therefore, the production cost of small-sized high-precision probes is extremely high

[0011] In response to the above problems, a probe preparation process based on laser etching method has emerged. This preparation process can effectively solve the environmental protection problems of the bottom-up electroplating method and the top-down photolithography method. high cost problem

[0012] As the size of the probes becomes smaller and smaller, the precision of laser etching is required to be higher and higher. At the same time, with the continuous emergence of the demand for special probe cards, the structure of the corresponding probes becomes more and more complex. The corresponding laser ablation pattern It also becomes irregular, which brings more and more challenges to the etching. In order to adapt to this change, a laser etching device with high precision and continuous adjustment of the spacing is urgently needed. However, through the existing data With the understanding of equipment and equipment, a general-purpose laser etching equipment, method and key technology that can realize the above functions have not been found.

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