A MEMS probe laser etching method

Abstract

A MEMS probe laser etching method of the present invention belongs to the technical field of semiconductor processing and testing; the MEMS probe laser etching method first performs parameter calculation, and obtains the stepping angle of the motor according to the etching distance of the single crystal silicon wafer, Then adjust the initial position, move the rotating spiral groove plate to the initial position, move the first etching point to the optical axis, and adjust the four-dimensional stage, then perform laser etching and progress judgment, and finally adjust the four-dimensional stage and motor, including the four-dimensional The distance that the platform moves downward, the distance to the left, the angle of clockwise rotation, and the angle of motor rotation; the MEMS probe laser etching method of the present invention, combined with the MEMS probe laser etching device of the present invention, not only the etching accuracy Higher, and the etching pitch can be adjusted continuously.

Description

technical field [0001] The invention relates to a MEMS probe laser etching method, which belongs to the technical field of semiconductor processing and testing. Background technique [0002] The probe card is a test interface used to test the bare core. By directly contacting the probes on the probe card with the pads or bumps on the IC chip, the IC chip signal is drawn out, and then cooperates with the test instrument to write to the IC chip. Input the test signal, and then realize the test before IC chip packaging. [0003] One of the core structures of the probe card is the probe. At present, there are two methods of making probes: bottom-up and top-down. [0004] Bottom-up plating method: [0005] CN201010000429.2, a microprobe structure and its manufacturing method, using the lithography, electroplating, planarization and etching technologies of the semiconductor manufacturing process, and replacing the electroplating second sacrificial layer metal with polymers, on ...

AI Technical Summary

Problems solved by technology

However, in order to realize the preparation of smaller-sized probes and ensure higher etching precision in this process, the cost of process equipment used will increase exponentially. Therefore, the production cost of small-sized high-precision probes is extremely high

[0011] In response to the above problems, a probe preparation process based on laser etching method has emerged. This preparation process can effectively solve the environmental protection problems of the bottom-up electroplating method and the top-down photolithography method. high cost problem

[0012] As the size of the probes becomes smaller and smaller, the precision of laser etching is required to be higher and higher. At the same time, with the continuous emergence of the demand for special probe cards, the structure of the corresponding probes becomes more and more complex. The corresponding laser ablation pattern It also becomes irregular, which brings more and more challenges to the etching. In order to adapt to this change, a laser etching device with high precision and continuous adjustment of the spacing is urgently needed. However, through the existing data With the understanding of equipment and equipment, a general-purpose laser etching equipment, method and key technology that can realize the above functions have not been found.

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