Optical quasi-focus method for mems probe laser etching device

Abstract

The optical quasi-focus method for the MEMS probe laser etching device of the present invention belongs to the technical field of semiconductor processing and testing; the method is firstly in the MEMS probe laser etching device, the spiral slot plate is replaced by the upper straight slot plate, and the The linear channel plate is replaced by the next word channel plate, and the single crystal silicon wafer is replaced by a flat mirror; a prism is installed between the next word channel plate and the objective lens, and an image sensor is installed on the side edge of the prism; and then the four-dimensional The mapping relationship between the position of the four-dimensional stage in the up-down direction and the image; then establish the mapping relationship between the position of the four-dimensional stage in the up-down direction and the spot diameter; finally find the minimum value of the spot diameter, according to the position of the corresponding four-dimensional stage in the up-down direction, and set the four-dimensional The table moves to the position; the optical quasi-focus method for the MEMS probe laser etching device of the present invention is used in the MEMS probe laser etching device and method disclosed in the present invention, not only the etching precision is higher, but also the etching The spacing can be adjusted continuously.

Description

technical field [0001] The invention relates to an optical quasi-focus method for a MEMS probe laser etching device, belonging to the technical field of semiconductor processing and testing. Background technique [0002] The probe card is a test interface used to test the bare core. By directly contacting the probes on the probe card with the pads or bumps on the IC chip, the IC chip signal is drawn out, and then cooperates with the test instrument to write to the IC chip. Input the test signal, and then realize the test before IC chip packaging. [0003] One of the core structures of the probe card is the probe. At present, there are two methods of making probes: bottom-up and top-down. [0004] Bottom-up plating method: [0005] CN201010000429.2, a microprobe structure and its manufacturing method, using the lithography, electroplating, planarization and etching technologies of the semiconductor manufacturing process, and replacing the electroplating second sacrificial ...

AI Technical Summary

Problems solved by technology

However, in order to realize the preparation of smaller-sized probes and ensure higher etching precision in this process, the cost of process equipment used will increase exponentially. Therefore, the production cost of small-sized high-precision probes is extremely high

[0011] In response to the above problems, a probe preparation process based on laser etching method has emerged. This preparation process can effectively solve the environmental protection problems of the bottom-up electroplating method and the top-down photolithography method. high cost problem

[0012] As the size of the probes becomes smaller and smaller, the precision of laser etching is required to be higher and higher. At the same time, with the continuous emergence of the demand for special probe cards, the structure of the corresponding probes becomes more and more complex. The corresponding laser ablation pattern It also becomes irregular, which brings more and more challenges to the etching. In order to adapt to this change, a laser etching device with high precision and continuous adjustment of the spacing is urgently needed. However, through the existing data With the understanding of equipment and equipment, a general-purpose laser etching equipment, method and key technology that can realize the above functions have not been found.

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