Preparation method of junction field effect transistor device

Abstract

The invention discloses a preparation method of a junction field effect transistor device, which belongs to the field of semiconductor device design and manufacture, and comprises the following stepsof: forming a first N-type buried layer and a P-type buried layer on a first surface of a silicon wafer, and annealing; growing a first P-type epitaxial layer after cleaning; forming a second N-type buried layer in the first P-type epitaxial layer; cleaning again, and growing a second P-type epitaxial layer; forming an N+ injection region and a P+ injection region; growing a silicon dioxide dielectric layer, forming a deep groove along the Y-axis direction, and forming a deep P+ doped region; cleaning, and then depositing P+ polycrystalline silicon; forming a corresponding gate contact hole; forming drain metal, first gate metal and source metal; and forming a second gate metal on the second surface. The beneficial effects of the invention are that the circuit is low in on-resistance, is high in grid control capability, is low in pinch-off voltage, is small in switching power consumption, and is lower in turn-off power consumption; and meanwhile, the circuit is high in stability and suitable for various constant-current source circuits.

Description

technical field [0001] The invention relates to the field of semiconductor device design and manufacture, in particular to a preparation method of a junction field effect transistor device. Background technique [0002] Junction Field-Effect Transistor (JFET) is a three-terminal active device with amplification function composed of PN junction gate, source and drain. Its working principle is to change the channel through the gate voltage. The conductivity of the channel is used to control the output current. JFET has the advantages of high input impedance, low power consumption, and good switching stability, so it has been widely used in power devices, low noise amplifiers, and high input impedance circuits. [0003] Junction field-effect transistors include depletion-mode JFETs and enhancement-mode JFETs, and depletion-mode JFETs are generally more common. For a depletion-type JFET, when no voltage is applied to the gate, the channel resistance is the smallest, and the tr...

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Problems solved by technology

[0004] JFET manufactured by traditional technology, while pursuing low on-resistance, often increases the turn-off voltage, which will lead to an increase in switching power consumption, and is likely to cause a large waste of power in power electronic equipment. Therefore, in order to solve the above problems , it is urgent to design a junction field effect transistor device to meet the needs of practical use

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