Unlock instant, AI-driven research and patent intelligence for your innovation.

Trench gate bipolar transistor having P-type drift region and N-type channel

A drift region, N-type technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increase, CSTBT turn-off time and turn-off power consumption are not optimized, and reduce the turn-off time. and the effect of shutdown power dissipation

Inactive Publication Date: 2020-05-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In terms of dynamic characteristics, compared with traditional IGBTs, the turn-off time and turn-off power consumption of CSTBT are not optimized, and even slightly increased

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trench gate bipolar transistor having P-type drift region and N-type channel
  • Trench gate bipolar transistor having P-type drift region and N-type channel
  • Trench gate bipolar transistor having P-type drift region and N-type channel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0017] A trench gate bipolar transistor with a P-type drift region and an N-type channel, the structure of which is as follows figure 1 As shown; including a collector structure, a drift region structure, an emitter structure and a groove gate structure; the collector structure includes a metallized collector 1 and a P-type collector region 2 located on the upper surface of the metallized collector 1; the The drift region structure includes an N-type buffer layer 3, a P-type drift region 4 located on the upper surface of the N-type buffer layer 3, and an N-type carrier storage (CS) layer 10 located on the upper surface of the P-type drift region 4; the N The type buffer layer 3 is located on the upper surface of the type P collector region 2; the emitter structure includes a metallized emitter 5, an N+ emitter region 6, a P+ contact region 7 and a P base regio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a trench gate bipolar transistor. According to the main scheme, a manufacturing process of a carrierstorage trench gate bipolar transistor (ND-IGBT) of an N-type channel of a conventional N-type drift region is applied to a P-type silicon wafer, that is, the conventional N-type drift region is changed into the P-type drift region, and the P-type drift region is placed between an N-type buffer layer 3 and an N-type CS layer 10. Therefore, the PD-IGBT provided by the invention has a technologicalprocess compatible with a commercial ND-IGBT. In the turn-off process of the device, the PD-IGBT accelerates the extraction of excess carriers by the device through the current positive feedback effect of the internal parasitic thyristor. Meanwhile, because the depletion layer of the PD-IGBT can be expanded into the N-type buffer layer, most of excessive minority carriers stored in the N-type buffer layer are extracted, and only a few excessive minority carriers are left for composite elimination. Therefore, the turn-off speed of the PD-IGBT is increased, and the turn-off power consumption ofthe PD-IGBT is reduced at the same time.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a trench gate bipolar transistor (Trench Insulated Gate Bipolar Transisitor, TIGBT for short). Background technique [0002] High-voltage power semiconductor devices are an important part of power electronics, and have a wide range of applications in fields such as motor drives in power systems and frequency conversion in consumer electronics. The traditional insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as: IGBT) has been widely used due to its superior performance in the field of medium and high voltage power electronics. However, IGBTs have trade-off optimization among energy consumption parameters such as turn-on energy consumption, turn-on energy consumption, and turn-off energy consumption. H.Takahashi et al first proposed a new groove gate IGBT structure - CSTBT (ND-IGBT) structure on ISPSD`96proceedings. This struct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0684H01L29/66348H01L29/7397
Inventor 陈万军许晓锐张舒逸李肇基张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA