Epitaxial structure of n-face group iii nitride, active device, and gate protection device thereof

Abstract

The invention relates to a nitrogen-surface III-group / nitride epitaxial structure, an active element thereof and a gate protection element thereof. The AlGaN / GaN epitaxial structure on the nitrogen surface comprises a silicon substrate; the buffer layer is positioned on the silicon substrate and is doped with carbon; the intrinsic gallium nitride layer with carbon doping is positioned on the buffer layer; the intrinsic aluminum gallium nitride buffer layer is positioned on the carbon-doped intrinsic gallium nitride layer; the intrinsic gallium nitride channel layer is positioned on the intrinsic aluminum gallium nitride buffer layer; and the intrinsic aluminum gallium nitride layer is positioned on the intrinsic gallium nitride channel layer. In the aspect of element design, a depletion type aluminum gallium nitride / gallium nitride high-speed electron mobility transistor is connected to a grid electrode of a P type gallium nitride grid electrode enhanced aluminum gallium nitride / gallium nitride high-speed electron mobility transistor; therefore, the grid electrode of the P-type gallium nitride grid electrode reinforced aluminum gallium nitride / gallium nitride high-speed electron mobility transistor can be protected from being operated under any grid electrode voltage.

Description

technical field [0001] The present invention relates to an epitaxial structure, in particular to a brand-new epitaxial structure of nitrogen-faced group III / nitride semiconductor series that can block buffer trap electrons from entering the channel layer (channel layer), and utilizes The active element and its gate protection element formed by the epitaxial structure. Background technique [0002] In the past known technology, the most common way to achieve enhanced aluminum gallium nitride / gallium nitride high-speed electron mobility transistor (E-Mode AlGaN / GaN HEMT) with epitaxial structure is 1. P-type nitrogen on the gallium surface Gallium nitride gate high-speed electron mobility transistor structure (Ga-Face P-GaN Gate E-Mode HEMT structure), 2. Nitrogen-faced aluminum gallium nitride gate-enhanced high-speed electron mobility transistor structure (N-Face Al(x )GaN Gate E-Mode HEMT structure), but just as the two components are named, it can be seen that only the Ga...

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Problems solved by technology

[0003] The most common process method is to use an epitaxial structure, etch away the P-GaN outside the Gate area by dry etching, and try to keep the integrity of the epitaxial layer thickness of the next layer, because the next layer If the epitaxial layer is etched too much, the 2DEG of the AlGaN / GaN interface of the Ga-Face P-GaN Gate E-Mode HEMT structure cannot be formed

Therefore, the method of dry etching is actually very difficult because: 1. The etching depth is difficult to control, 2. The thickness of each epitaxial layer on the epitaxial chip will still be uneven; in addition, this epitaxial structure is different from the general depletion type. The current collapse effect (Current Collapse) of the epitaxial structure of the high-speed electron mobility transistor structure must be solved, such as: buffer layer defects (Buffer Traps) and surface defects (Surface Traps)

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