Side wall modified coating crucible for ingot single polycrystalline and preparation method thereof

Abstract

The invention provides a method for preparing a crucible with improved coating on the side wall for casting single and polycrystalline ingots, which includes providing a crucible body, the crucible body includes a base and a side wall extending upward from the base; A mixed solution, rolling the first mixed solution on the inner surface of the side wall to form a first silicon nitride layer, the surface roughness Ra of the first silicon nitride layer is less than 20 μm; mixing quartz sand with water and grinding to form quartz Slurry, quartz slurry is mixed with silica sol and water to form a mixed slurry, and the mixed slurry is sprayed on the first silicon nitride layer to form a quartz layer, the quartz layer completely covers the first silicon nitride layer, the surface of the quartz layer The roughness Ra is 40μm-60μm; silicon nitride, silicon sol and water are mixed to form a second mixed solution, and the second mixed solution is sprayed on the quartz layer to form a second silicon nitride layer, and the surface of the second silicon nitride layer The roughness Ra is 60μm-80μm, and the side wall modified coating crucible for ingot single and polycrystalline is obtained.

Description

technical field [0001] The invention relates to the technical field of crucibles, in particular to a crucible with improved side walls and a preparation method thereof for casting single and polycrystalline ingots. Background technique [0002] The crucible is used to load polysilicon raw materials in the process of polysilicon ingot casting, and obtain the container of polysilicon ingots through heating, melting, crystal growth, annealing and cooling stages. Polycrystalline ingots are prepared by full-melting or semi-melting processes. The control of efficient nucleation at the bottom of the silicon ingot has reached a high level, but the disordered nucleation of the side walls of the silicon ingot has always affected the efficiency of the entire ingot cell. , resulting in cell twinning and fuse phenomena. None of the current methods for solving the needless sidewall of the silicon ingot in the ingot can not only provide abundant nucleation points, but also reduce the impu...

AI Technical Summary

Problems solved by technology

Polycrystalline ingots are prepared by full-melting or semi-melting processes. The control of efficient nucleation at the bottom of the silicon ingot has reached a high level, but the disordered nucleation on the side wall of the silicon ingot has always affected the efficiency of the entire ingot cell. , resulting in cell twinning and fuse phenomena

At present, none of the methods to solve the problem of unnecessary side walls of silicon ingots in casting ingots can not only provide abundant nucleation points, but also reduce the impurity content of silicon ingots, and at the same time, the phenomenon of sticking to the pot does not occur.

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