Side wall modified coating crucible for ingot single polycrystalline and preparation method thereof

A crucible and ingot technology is applied in the field of sidewall improvement coating crucible for ingot single polycrystalline and its preparation, which can solve the problems of cell twins, fuses, affecting cell efficiency, etc., and achieves stable performance, large Surface roughness, the effect that is conducive to efficient and ordered nucleation

Active Publication Date: 2022-04-01
SINOMA JIANGSU SOLAR ENERGY NEW MATERIALS +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Polycrystalline ingots are prepared by full-melting or semi-melting processes. The control of efficient nucleation at the bottom of the silicon ingot has reached a high level, but the disordered nucleation on the side wall of the silicon ingot has always affected the efficiency of the entire ingot cell. , resulting in cell twinning and fuse phenomena
At present, none of the methods to solve the problem of unnecessary side walls of silicon ingots in casting ingots can not only provide abundant nucleation points, but also reduce the impurity content of silicon ingots, and at the same time, the phenomenon of sticking to the pot does not occur.

Method used

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  • Side wall modified coating crucible for ingot single polycrystalline and preparation method thereof
  • Side wall modified coating crucible for ingot single polycrystalline and preparation method thereof
  • Side wall modified coating crucible for ingot single polycrystalline and preparation method thereof

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preparation example Construction

[0072] The invention provides a method for preparing a crucible with improved sidewall coating for ingot single-polycrystal, comprising:

[0073] A crucible body is provided, and the crucible body includes a base and a side wall extending upward from the base;

[0074] Mixing silicon nitride, silicon sol and water to form a first mixed solution, rolling coating the first mixed solution on the inner surface of the side wall to form a first silicon nitride layer, the first silicon nitride layer The surface roughness Ra is less than 20μm;

[0075] Quartz sand is mixed with water and ground to form a quartz slurry, the quartz slurry is mixed with silica sol and water to form a mixed slurry, and the mixed slurry is sprayed on the first silicon nitride layer to form a quartz layer , the quartz layer completely covers the first silicon nitride layer, and the surface roughness Ra of the quartz layer is 40 μm-55 μm;

[0076] Mixing silicon nitride, silica sol and water to form a seco...

Embodiment 1

[0132] A method for preparing a crucible with improved coating on the side wall for casting single and polycrystalline ingots, comprising:

[0133] Step 1: Provide the crucible body, silicon nitride, silica sol and quartz sand, the crucible body includes a base and a side wall extending upward from the base;

[0134] Step 2: Mix silicon nitride, silica sol and water to form the first mixed solution, wherein the purity of silicon nitride is 99.999%, the median particle size of silicon nitride is 4 μm, and the density of silicon nitride, silica sol and water The mass ratio is 1:0.32:1.2; the first mixed solution is coated on the inner surface of the side wall by a roll coating process to form a first silicon nitride layer, the thickness of the first silicon nitride layer is 150 μm, and the first nitride The silicon layer covers part of the inner surface of the sidewall.

[0135] Step 3: Quartz sand is mixed with water and ground to form a quartz slurry, wherein the purity of th...

Embodiment 2

[0139] A method for preparing a crucible with improved coating on the side wall for casting single and polycrystalline ingots, comprising:

[0140] Step 1: Provide the crucible body, silicon nitride, silica sol and quartz sand, the crucible body includes a base and a side wall extending upward from the base;

[0141] Step 2: Mix silicon nitride, silica sol and water to form the first mixed liquid. The purity of silicon nitride is 99.9995%, the median particle size of silicon nitride is 6 μm, and silicon nitride includes α crystal phase and β crystal phase , the mass ratio of α crystal phase to β crystal phase is 1:1, and the mass ratio of silicon nitride, silica sol and water is 1:0.5:1.2; the first mixed liquid is coated on the inside of the side wall by rolling coating process On the surface, a first silicon nitride layer is formed, the thickness of the first silicon nitride layer is 120 μm, the surface roughness Ra is less than 20 μm, and the first silicon nitride layer com...

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Abstract

The invention provides a method for preparing a crucible with improved coating on the side wall for casting single and polycrystalline ingots, which includes providing a crucible body, the crucible body includes a base and a side wall extending upward from the base; A mixed solution, rolling the first mixed solution on the inner surface of the side wall to form a first silicon nitride layer, the surface roughness Ra of the first silicon nitride layer is less than 20 μm; mixing quartz sand with water and grinding to form quartz Slurry, quartz slurry is mixed with silica sol and water to form a mixed slurry, and the mixed slurry is sprayed on the first silicon nitride layer to form a quartz layer, the quartz layer completely covers the first silicon nitride layer, the surface of the quartz layer The roughness Ra is 40μm-60μm; silicon nitride, silicon sol and water are mixed to form a second mixed solution, and the second mixed solution is sprayed on the quartz layer to form a second silicon nitride layer, and the surface of the second silicon nitride layer The roughness Ra is 60μm-80μm, and the side wall modified coating crucible for ingot single and polycrystalline is obtained.

Description

technical field [0001] The invention relates to the technical field of crucibles, in particular to a crucible with improved side walls and a preparation method thereof for casting single and polycrystalline ingots. Background technique [0002] The crucible is used to load polysilicon raw materials in the process of polysilicon ingot casting, and obtain the container of polysilicon ingots through heating, melting, crystal growth, annealing and cooling stages. Polycrystalline ingots are prepared by full-melting or semi-melting processes. The control of efficient nucleation at the bottom of the silicon ingot has reached a high level, but the disordered nucleation of the side walls of the silicon ingot has always affected the efficiency of the entire ingot cell. , resulting in cell twinning and fuse phenomena. None of the current methods for solving the needless sidewall of the silicon ingot in the ingot can not only provide abundant nucleation points, but also reduce the impu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B05D1/02B05D1/28B05D7/24B05D7/00C30B28/06C30B29/06
CPCB05D1/02B05D1/28B05D7/24B05D7/56C30B28/06C30B29/06
Inventor 李良良钟德京黄蓉帅黄福龙周华
Owner SINOMA JIANGSU SOLAR ENERGY NEW MATERIALS
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