Time domain in-memory computing array structure based on magnetic random access memory

A random access memory and computing array technology, applied in the field of high-energy-efficiency circuit design, can solve the problems of low calculation and quantization accuracy, achieve high quantization accuracy, reduce overall power consumption, and reduce memory access power consumption

Active Publication Date: 2021-03-30
SOUTHEAST UNIV
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And based on the delay difference quantization unit disclosed in the present invention, the problem of low quantization accuracy of traditional in-memory calculations is solved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Time domain in-memory computing array structure based on magnetic random access memory
  • Time domain in-memory computing array structure based on magnetic random access memory
  • Time domain in-memory computing array structure based on magnetic random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0094] In-memory computing circuit suitable for fully connected binary neural network, including: dual-mode storage array, adaptive pipeline decoder, pre-charging circuit, column selector, sense amplifier, input and output unit, delay difference quantization unit , counting unit, timing control circuit and mode selection module.

[0095]

[0096] In the formula (2), the weight matrix M is mapped in the dual-mode storage array disclosed by the present invention as:

[0097]

[0098] The mapping method is that the weight matrix M in the formula (2) is transposed along the diagonal as in the formula (3), and the matrix coordinates after the transposition are stored in the storage unit in the dual-mode storage array disclosed by the present invention.

[0099] In the formula (2), the activation value vector V is mapped as:

[0100]

[0101] The mapping method is that the activation value vector V in the formula (2) is applied in the form of a word line signal in the dual...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a time domain in-memory computing array structure based on a magnetic random access memory (MRAM), and belongs to the field of integrated circuit design. The circuit is characterized in that the structure comprises a dual-mode storage array, a self-adaptive pipeline decoder, a pre-charging circuit, a column selector, a sensitive amplifier, an input and output unit, a delaydifference quantization unit, a counting unit, a time sequence control circuit and a mode selection module. The method has a standard read-write mode and an in-memory calculation mode. Under the standard read-write mode, the read-write operation of the data in the storage array can be realized; the in-memory calculation mode can realize multiply-accumulate operation in binary neural network calculation. Multiply-accumulate calculation is completed during the reading of data; meanwhile, the delay quantization unit and the storage array are integrated together to reduce memory access energy consumption; compared with a conventional Von Noemann architecture neural network accelerator, the network operation energy efficiency is effectively improved.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a magnetic random access memory (MRAM)-based time-domain in-memory computing array structure and a high-energy-efficiency circuit design method for realizing binary neural network convolution calculation based on the memory. Background technique [0002] In recent years, Convolutional Neural Networks (CNN) have shined in areas such as image recognition, leading a new wave of artificial intelligence. Convolutional neural network is a hierarchical network structure, such as figure 1 As shown, it mainly includes the following hierarchical structures: data input layer, convolution calculation layer, function excitation layer, pooling layer, and fully connected layer. Such as figure 2 As shown, the calculation process can be summarized as that the current network layer is to weight and sum the activation values ​​of the previous layer, then add a bias item, and finally obta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16G06N3/063
CPCG11C11/1653G11C11/1673G11C11/1675G06N3/063Y02D10/00
Inventor 蔡浩周永亮张优优刘波
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products