Time domain in-memory computing array structure based on magnetic random access memory
A random access memory and computing array technology, applied in the field of high-energy-efficiency circuit design, can solve the problems of low calculation and quantization accuracy, achieve high quantization accuracy, reduce overall power consumption, and reduce memory access power consumption
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[0094] In-memory computing circuit suitable for fully connected binary neural network, including: dual-mode storage array, adaptive pipeline decoder, pre-charging circuit, column selector, sense amplifier, input and output unit, delay difference quantization unit , counting unit, timing control circuit and mode selection module.
[0095]
[0096] In the formula (2), the weight matrix M is mapped in the dual-mode storage array disclosed by the present invention as:
[0097]
[0098] The mapping method is that the weight matrix M in the formula (2) is transposed along the diagonal as in the formula (3), and the matrix coordinates after the transposition are stored in the storage unit in the dual-mode storage array disclosed by the present invention.
[0099] In the formula (2), the activation value vector V is mapped as:
[0100]
[0101] The mapping method is that the activation value vector V in the formula (2) is applied in the form of a word line signal in the dual...
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