Internal power source circuit

A technology of internal power supply and internal voltage, applied in the direction of constant current power supply DC circuit, adjusting electric variable, static memory, etc., can solve the problem of large current consumption and achieve the effect of reducing current consumption

Inactive Publication Date: 2003-10-29
MITSUBISHI ELECTRIC CORP
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This results in relatively large current consumption

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Internal power source circuit
  • Internal power source circuit
  • Internal power source circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] The present invention is most applicable to an internal power supply voltage generating circuit (internal step-down circuit (down converter)) for generating an internal power supply voltage from an external power supply voltage. However, it can also be used in a circuit that generates an internal voltage from a voltage applied to a power supply node (internal power supply node). In the following description, the voltage applied to the power supply node is indicated by reference symbol "VCC".

[0047] figure 1 The structure of the internal power supply circuit of the first embodiment of the present invention is shown. refer to figure 1 , the internal power supply circuit includes a p-channel metal-oxide-semiconductor transistor (first metal Oxide semiconductor transistor) Q1; a high resistance resistance element R1 connected between the power supply node 1 and the internal node 3; a connection between the power supply node 1 and the internal voltage output node 4 and a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An internal power supply circuit including a first output metal oxide semiconductor transistor (Q1) for delivering a first reference voltage (V ref ), an internal reference voltage generating circuit (10) for generating a second reference voltage from the output voltage of (Q1), and an output metal oxide semiconductor transistor (Q2) which operates at the source according to the second internal reference voltage Follower mode. The internal reference voltage generating circuit (10) has the function of eliminating the influence of the threshold voltages of the output metal oxide semiconductor transistor (Q2) and the first metal oxide semiconductor transistor (Q1) on the internal voltage VINT on the output node (4).

Description

technical field [0001] The present invention relates to a circuit for generating a specified level voltage in a semiconductor device, and more particularly to a structure of an internal power supply circuit for generating an internal power supply voltage by reducing an external power supply voltage, and particularly to a low power consumption internal power circuit. Background technique [0002] In a semiconductor integrated circuit, a voltage source is required in some cases to supply a voltage of a prescribed voltage level independent of an external power supply voltage. One of such cases is as follows, in order to achieve higher density and higher level of integration, semiconductor components are miniaturized. The breakdown voltage of miniaturized semiconductor elements decreases, and therefore, the power supply voltage (operating power supply voltage) of a semiconductor integrated circuit including these miniaturized semiconductor elements as its components must be low...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G05F3/24G05F1/46G11C5/14G11C11/407H02J1/04
CPCG05F1/465G11C5/14
Inventor 飞田洋一
Owner MITSUBISHI ELECTRIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap